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| Presentation | 2021-11-11 15:15 [Invited Talk] Characterization techniques of plasma process-induced defect creation in electronic devices Koji Eriguchi (Kyoto Univ.)  SDM2021-57 Link to ES Tech. Rep. Archives: SDM2021-57 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Plasma processing plays an important role in manufacturing leading-edge electronic devices. Plasma etching achieves fine patterns with anisotropic features at the atomic scale. Recently, it has been pointed out that plasma etching sometimes degrades the performance and reliability of MOSFETs by way of defect generation in materials such as crystalline Si substrate and dielectric films. This negative aspect is defined as plasma-induced damage (PID). This article firstly provides a brief overview of PID mechanisms by focusing on the characterization techniques for the assessment of ion bombardment damage. Then, one of the emerging topics with respect to PID, i.e., the defect generation by stochastic straggling is discussed. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Plasma-induced damage / ion bombardment / defect / carrier trap / electrical characterization / lateral / / | |
| Reference Info. | IEICE Tech. Rep., vol. 121, no. 235, SDM2021-57, pp. 23-28, Nov. 2021. | |
| Paper # | SDM2021-57 | |
| Date of Issue | 2021-11-04 (SDM) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2021-57 Link to ES Tech. Rep. Archives: SDM2021-57 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2021-11-11 - 2021-11-12 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process, Device, Circuit simulation, etc. |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2021-11-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization techniques of plasma process-induced defect creation in electronic devices |
| Sub Title (in English) | |
| Keyword(1) | Plasma-induced damage |
| Keyword(2) | ion bombardment |
| Keyword(3) | defect |
| Keyword(4) | carrier trap |
| Keyword(5) | electrical characterization |
| Keyword(6) | lateral |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Koji Eriguchi |
| 1st Author's Affiliation | Kyoto University (Kyoto Univ.) |
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| Speaker | Author-1 |
| Date Time | 2021-11-11 15:15:00 |
| Presentation Time | 60 minutes |
| Registration for | SDM |
| Paper # | SDM2021-57 |
| Volume (vol) | vol.121 |
| Number (no) | no.235 |
| Page | pp.23-28 |
| #Pages | 6 |
| Date of Issue | 2021-11-04 (SDM) |
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