Paper Abstract and Keywords |
Presentation |
2021-11-11 13:00
[Invited Talk]
Prospects of HfZrO2-based FeFETs for Ultra-low Power Memory, Logic and AI Applications Shinichi Takagi, Kasidit Toprasertpong, Xuan Luo, Eishin Nako, Zeyu Wang, Tsung-En Lee, Kento Tahara, Mitsuru Takenaka, Ryosho Nakane (U. Tokyo) SDM2021-55 Link to ES Tech. Rep. Archives: SDM2021-55 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Since the discovery of ferroelectricity in HfO2-based dielectric films in 2011, FeFETs using HfO2-based thin films as gate dielectrics have attracted a strong interest. Thus, extremely active researches have been conducted for various applications such as ultra-low power memory, logic and AI computing. In this paper, we summarize our research activities of HfO2-based FeFETs for these various applications as well as discuss the device operation mechanism, which is important for quantitatively understanding the characteristics of FeFET memory. In addition, the physical properties and evaluation of ZrO2 thin films for anti-ferroelectric FeFET logic are addressed. We also introduce the results of the proposed reservoir computing using FeFETs with the interaction between the polarization response of the film itself and the carriers in the channel. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Ferroelectric FET / Polarization-voltage characteristics / HfxZr1-xO2 / Reservoir computing / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 121, no. 235, SDM2021-55, pp. 13-18, Nov. 2021. |
Paper # |
SDM2021-55 |
Date of Issue |
2021-11-04 (SDM) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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SDM2021-55 Link to ES Tech. Rep. Archives: SDM2021-55 |
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