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Paper Abstract and Keywords
Presentation 2021-10-21 16:00
Current Measurement Platform Applied for Statistical Measurement of Discharge Current due to Traps in SiN Dielectrics
Koga Saito, Hayato Suzuki, Hyeonwoo Park, Rihito Kuroda (Tohoku Univ.), Akinobu Teramoto (Hiroshima Univ.), Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.) SDM2021-51
Abstract (in Japanese) (See Japanese page) 
(in English) A current measurement platform to measure current across dielectrics with a high precision of $10^{-17}$ A applied for statistical measurement of discharge current due to traps in SiN dielectrics are presented. The developed platform consists of a common readout circuit part with 384×360 cells formed at 10 μm pitch and a dielectric part formed on the circuit part by a simple process. By applying a voltage to the top electrode of the dielectric part, a current across dielectrics of each cell can be statistically measured with high speed and high precision. We statistically measured the trap property of SiN films in MIM capacitors formed by plasma-enhanced CVD (PECVD) by Discharge Current Transient Spectroscopy (DCTS). The distributions of energy levels and densities of traps under different formation conditions with dielectric film thicknesses and electrode areas are verified.
Keyword (in Japanese) (See Japanese page) 
(in English) Capacitor / SiN / Trap / DCTS / Current measurement / Platform / /  
Reference Info. IEICE Tech. Rep., vol. 121, no. 212, SDM2021-51, pp. 23-26, Oct. 2021.
Paper # SDM2021-51 
Date of Issue 2021-10-14 (SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2021-10-21 - 2021-10-21 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process Science and New Process Technology 
Paper Information
Registration To SDM 
Conference Code 2021-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Current Measurement Platform Applied for Statistical Measurement of Discharge Current due to Traps in SiN Dielectrics 
Sub Title (in English)  
Keyword(1) Capacitor  
Keyword(2) SiN  
Keyword(3) Trap  
Keyword(4) DCTS  
Keyword(5) Current measurement  
Keyword(6) Platform  
1st Author's Name Koga Saito  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Hayato Suzuki  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Hyeonwoo Park  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Rihito Kuroda  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
5th Author's Name Akinobu Teramoto  
5th Author's Affiliation Hiroshima University (Hiroshima Univ.)
6th Author's Name Tomoyuki Suwa  
6th Author's Affiliation Tohoku University (Tohoku Univ.)
7th Author's Name Shigetoshi Sugawa  
7th Author's Affiliation Tohoku University (Tohoku Univ.)
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Date Time 2021-10-21 16:00:00 
Presentation Time 25 
Registration for SDM 
Paper # IEICE-SDM2021-51 
Volume (vol) IEICE-121 
Number (no) no.212 
Page pp.23-26 
#Pages IEICE-4 
Date of Issue IEICE-SDM-2021-10-14 

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