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Presentation 2021-10-08 15:35
Voltage-induced coercivity change in Pt/Co/CoO/amorphous TiOx structure
Tomohiro Nozaki, Shingo Tamaru, Makoto Konoto, Takayuki Nozaki, Hitoshi Kubota, Akio Fukushima, Shinji Yuasa (AIST) MRIS2021-9 Link to ES Tech. Rep. Archives: MRIS2021-9
Abstract (in Japanese) (See Japanese page) 
(in English) Voltage controlled magnetic anisotropy (VCMA) effect has been attracted attention as a low power consumption spin manipulation technique, applicable to magnetoresistive random access memory (MRAM). For the research of the VCMA effect, we focused on fcc-Co (111)-based system as an alternative to bcc-Fe (001)-based systems. In this study, we investigated the voltage-induced coercivity change of the Pt/Co/amorphous TiOx structure, where we use an amorphous TiOx as a dielectric layer. About an order of magnitude larger voltage-induced coercivity change than the past reports was obtained when Co film thickness is relatively thick. We also demonstrated that the coercivity can be reduced while maintaining the voltage-induced coercivity change.by inserting Ir or Ru into Pt/Co interface.
Keyword (in Japanese) (See Japanese page) 
(in English) perpendicular magnetic anisotropy (PMA) / voltage controlled magnetic anisotropy (VCMA) / fcc-Co(111) / molecular beam epitaxy (MBE) / sputtering / / /  
Reference Info. IEICE Tech. Rep., vol. 121, no. 193, MRIS2021-9, pp. 13-16, Oct. 2021.
Paper # MRIS2021-9 
Date of Issue 2021-10-01 (MRIS) 
ISSN Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF MRIS2021-9 Link to ES Tech. Rep. Archives: MRIS2021-9

Conference Information
Committee MRIS ITE-MMS  
Conference Date 2021-10-08 - 2021-10-08 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Recording Head, Spintronics, Solid State Memory, Media, etc. 
Paper Information
Registration To MRIS 
Conference Code 2021-10-MRIS-MMS 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Voltage-induced coercivity change in Pt/Co/CoO/amorphous TiOx structure 
Sub Title (in English)  
Keyword(1) perpendicular magnetic anisotropy (PMA)  
Keyword(2) voltage controlled magnetic anisotropy (VCMA)  
Keyword(3) fcc-Co(111)  
Keyword(4) molecular beam epitaxy (MBE)  
Keyword(5) sputtering  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Tomohiro Nozaki  
1st Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
2nd Author's Name Shingo Tamaru  
2nd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
3rd Author's Name Makoto Konoto  
3rd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
4th Author's Name Takayuki Nozaki  
4th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
5th Author's Name Hitoshi Kubota  
5th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
6th Author's Name Akio Fukushima  
6th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
7th Author's Name Shinji Yuasa  
7th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
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Speaker Author-1 
Date Time 2021-10-08 15:35:00 
Presentation Time 25 minutes 
Registration for MRIS 
Paper # MRIS2021-9 
Volume (vol) vol.121 
Number (no) no.193 
Page pp.13-16 
#Pages
Date of Issue 2021-10-01 (MRIS) 


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