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Paper Abstract and Keywords
Presentation 2021-08-18 11:00
[Invited Talk] Demonstration of HfO2-based ferroelectric ultra-thin films with low operating voltage, low process temperature, and high endurance -- Toward embedded memory in advanced technology nodes --
Kasidit Toprasertpong, Kento Tahara (Univ. Tokyo), Yukinobu Hikosaka, Ko Nakamura, Hitoshi Saito (Fujitsu Semiconductor Memory Solution), Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2021-38 ICD2021-9
Abstract (in Japanese) (See Japanese page) 
(in English) In this study, we demonstrate the importance of the thickness scaling of Hf0.5Zr0.5O2 thin films for the ferroelectric memory application by systematically investigating the fabrication process, ferroelectric properties, and memory-device reliability of Hf0.5Zr0.5O2 films in a 2.8~9.5 nm thickness range. We experimentally examine the tradeoff between the crystallization temperature and the thickness, showing the minimum temperature for a target thickness, and provide a process design for the BEOL application. With the thickness scaling under low temperature and the cycling under high field, we demonstrate 4-nm Hf0.5Zr0.5O2 ferroelectric thin films which are processed at 500 ºC, operate at low voltage of 0.7~1.2 V, and achieve data retention over 10 years and endurance over 10^14 write cycles.
Keyword (in Japanese) (See Japanese page) 
(in English) HfO2-based ferroelectric / HfxZr1-xO2 / BEOL / Thin Film / Low Voltage / Endurance / Breakdown /  
Reference Info. IEICE Tech. Rep., vol. 121, no. 138, SDM2021-38, pp. 42-47, Aug. 2021.
Paper # SDM2021-38 
Date of Issue 2021-08-10 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2021-38 ICD2021-9

Conference Information
Committee SDM ICD ITE-IST  
Conference Date 2021-08-17 - 2021-08-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications 
Paper Information
Registration To SDM 
Conference Code 2021-08-SDM-ICD-IST 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Demonstration of HfO2-based ferroelectric ultra-thin films with low operating voltage, low process temperature, and high endurance 
Sub Title (in English) Toward embedded memory in advanced technology nodes 
Keyword(1) HfO2-based ferroelectric  
Keyword(2) HfxZr1-xO2  
Keyword(3) BEOL  
Keyword(4) Thin Film  
Keyword(5) Low Voltage  
Keyword(6) Endurance  
Keyword(7) Breakdown  
Keyword(8)  
1st Author's Name Kasidit Toprasertpong  
1st Author's Affiliation The University of Tokyo (Univ. Tokyo)
2nd Author's Name Kento Tahara  
2nd Author's Affiliation The University of Tokyo (Univ. Tokyo)
3rd Author's Name Yukinobu Hikosaka  
3rd Author's Affiliation Fujitsu Semiconductor Memory Solution Limited (Fujitsu Semiconductor Memory Solution)
4th Author's Name Ko Nakamura  
4th Author's Affiliation Fujitsu Semiconductor Memory Solution Limited (Fujitsu Semiconductor Memory Solution)
5th Author's Name Hitoshi Saito  
5th Author's Affiliation Fujitsu Semiconductor Memory Solution Limited (Fujitsu Semiconductor Memory Solution)
6th Author's Name Mitsuru Takenaka  
6th Author's Affiliation The University of Tokyo (Univ. Tokyo)
7th Author's Name Shinichi Takagi  
7th Author's Affiliation The University of Tokyo (Univ. Tokyo)
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Speaker
Date Time 2021-08-18 11:00:00 
Presentation Time 45 
Registration for SDM 
Paper # IEICE-SDM2021-38,IEICE-ICD2021-9 
Volume (vol) IEICE-121 
Number (no) no.138(SDM), no.139(ICD) 
Page pp.42-47 
#Pages IEICE-6 
Date of Issue IEICE-SDM-2021-08-10,IEICE-ICD-2021-08-10 


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