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| Presentation | 2021-08-18 11:00 [Invited Talk] Demonstration of HfO2-based ferroelectric ultra-thin films with low operating voltage, low process temperature, and high endurance -- Toward embedded memory in advanced technology nodes -- Kasidit Toprasertpong, Kento Tahara (Univ. Tokyo), Yukinobu Hikosaka, Ko Nakamura, Hitoshi Saito (Fujitsu Semiconductor Memory Solution), Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo)  SDM2021-38 ICD2021-9 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In this study, we demonstrate the importance of the thickness scaling of Hf0.5Zr0.5O2 thin films for the ferroelectric memory application by systematically investigating the fabrication process, ferroelectric properties, and memory-device reliability of Hf0.5Zr0.5O2 films in a 2.8~9.5 nm thickness range. We experimentally examine the tradeoff between the crystallization temperature and the thickness, showing the minimum temperature for a target thickness, and provide a process design for the BEOL application. With the thickness scaling under low temperature and the cycling under high field, we demonstrate 4-nm Hf0.5Zr0.5O2 ferroelectric thin films which are processed at 500 ºC, operate at low voltage of 0.7~1.2 V, and achieve data retention over 10 years and endurance over 10^14 write cycles. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | HfO2-based ferroelectric / HfxZr1-xO2 / BEOL / Thin Film / Low Voltage / Endurance / Breakdown / | |
| Reference Info. | IEICE Tech. Rep., vol. 121, no. 138, SDM2021-38, pp. 42-47, Aug. 2021. | |
| Paper # | SDM2021-38 | |
| Date of Issue | 2021-08-10 (SDM, ICD) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2021-38 ICD2021-9 |
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| Conference Information | |
| Committee | SDM ICD ITE-IST |
| Conference Date | 2021-08-17 - 2021-08-18 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2021-08-SDM-ICD-IST |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Demonstration of HfO2-based ferroelectric ultra-thin films with low operating voltage, low process temperature, and high endurance |
| Sub Title (in English) | Toward embedded memory in advanced technology nodes |
| Keyword(1) | HfO2-based ferroelectric |
| Keyword(2) | HfxZr1-xO2 |
| Keyword(3) | BEOL |
| Keyword(4) | Thin Film |
| Keyword(5) | Low Voltage |
| Keyword(6) | Endurance |
| Keyword(7) | Breakdown |
| Keyword(8) | |
| 1st Author's Name | Kasidit Toprasertpong |
| 1st Author's Affiliation | The University of Tokyo (Univ. Tokyo) |
| 2nd Author's Name | Kento Tahara |
| 2nd Author's Affiliation | The University of Tokyo (Univ. Tokyo) |
| 3rd Author's Name | Yukinobu Hikosaka |
| 3rd Author's Affiliation | Fujitsu Semiconductor Memory Solution Limited (Fujitsu Semiconductor Memory Solution) |
| 4th Author's Name | Ko Nakamura |
| 4th Author's Affiliation | Fujitsu Semiconductor Memory Solution Limited (Fujitsu Semiconductor Memory Solution) |
| 5th Author's Name | Hitoshi Saito |
| 5th Author's Affiliation | Fujitsu Semiconductor Memory Solution Limited (Fujitsu Semiconductor Memory Solution) |
| 6th Author's Name | Mitsuru Takenaka |
| 6th Author's Affiliation | The University of Tokyo (Univ. Tokyo) |
| 7th Author's Name | Shinichi Takagi |
| 7th Author's Affiliation | The University of Tokyo (Univ. Tokyo) |
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| Speaker | 1 |
| Date Time | 2021-08-18 11:00:00 |
| Presentation Time | 45 |
| Registration for | SDM |
| Paper # | IEICE-SDM2021-38,IEICE-ICD2021-9 |
| Volume (vol) | IEICE-121 |
| Number (no) | no.138(SDM), no.139(ICD) |
| Page | pp.42-47 |
| #Pages | IEICE-6 |
| Date of Issue | IEICE-SDM-2021-08-10,IEICE-ICD-2021-08-10 |
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