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| Presentation | 2021-06-22 17:30 Formation and Thickness Control of Ultrathin Ge Layer on Al and Ag/(111) Structures by Thermal Anneal Akio Ohta, Keigo Matsushita, Noriyuki Taoka, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.)  SDM2021-29 Link to ES Tech. Rep. Archives: SDM2021-29 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Ge surface segregation on Al/Ge(111) and Ag/Ge(111) structures by thermal anneal was investigated. Ultrathin Ge formation and its chemical bonding features have been evaluated from the x-ray photoelectron spectroscopy (XPS). And, change in the average Ge thickness with the anneal temperatures and times was crudely estimated. We found that anneal temperature rather than the time was found to be important for the control of a sub-nanometer scale Ge layer formation. Thermal desorption spectroscopy (TDS) measurements of Al/Ge(111) and Ag/Ge(111) indicated that GeO desorption from the samples was hardly detected in the temperature range below 600 ºC. From these results, it was speculated that the Ge atoms were distributed in the metal layer from the substrate by anneal, and then Ge atoms were segregated at the surface by a decrease in the Ge solubility in the metal with cooling the samples down to room temperature. And also, Ge diffusion through the grain boundaries was suggested since the ultrathin Ge formation even in a temperature range with quite low Ge solubility in Al. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Germanium / Diffusion/Segregation / XPS / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 121, no. 71, SDM2021-29, pp. 27-31, June 2021. | |
| Paper # | SDM2021-29 | |
| Date of Issue | 2021-06-15 (SDM) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2021-29 Link to ES Tech. Rep. Archives: SDM2021-29 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2021-06-22 - 2021-06-22 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Material Science and Process Technology for MOS Devices and Memories |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2021-06-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Formation and Thickness Control of Ultrathin Ge Layer on Al and Ag/(111) Structures by Thermal Anneal |
| Sub Title (in English) | |
| Keyword(1) | Germanium |
| Keyword(2) | Diffusion/Segregation |
| Keyword(3) | XPS |
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| 1st Author's Name | Akio Ohta |
| 1st Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 2nd Author's Name | Keigo Matsushita |
| 2nd Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 3rd Author's Name | Noriyuki Taoka |
| 3rd Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 4th Author's Name | Katsunori Makihara |
| 4th Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 5th Author's Name | Seiichi Miyazaki |
| 5th Author's Affiliation | Nagoya University (Nagoya Univ.) |
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| Speaker | Author-1 |
| Date Time | 2021-06-22 17:30:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2021-29 |
| Volume (vol) | vol.121 |
| Number (no) | no.71 |
| Page | pp.27-31 |
| #Pages | 5 |
| Date of Issue | 2021-06-15 (SDM) |
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