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| Presentation | 2021-05-27 14:10 Evaluation of I-V Characteristics of Zr/ZrOx/Pt Structure for Resistive Random Access Memory Yuki Kawai, Masaru Sato, Mayumi B. Takeyama (Kitami Inst. of Tech.)  ED2021-3 CPM2021-3 SDM2021-14 Link to ES Tech. Rep. Archives: ED2021-3 CPM2021-3 SDM2021-14 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Resistive random access memory is attracting attention as the next generation non-volatile memory. However, there are various issues such as increased operating voltage, and current, and high power consumption due to the forming process. In this study, we prepared the Zr/ZrOx/Pt structure using ZrOx films with different film thickness and examined I-V characteristics of Zr/ZrOx/Pt structure. As a result, we can obtain forming free RRAM device using Zr/ZrOx/Pt structure with 10 nm thick ZrOx film. Also, both low operating voltage (< 5 V) and the low operating current (< 100 nA) are demonstrated in Zr/ZrOx/Pt structures. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Resistive random access memory / non-volatile memories / Forming process / ZrOx film / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 121, no. 45, CPM2021-3, pp. 11-14, May 2021. | |
| Paper # | CPM2021-3 | |
| Date of Issue | 2021-05-20 (ED, CPM, SDM) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2021-3 CPM2021-3 SDM2021-14 Link to ES Tech. Rep. Archives: ED2021-3 CPM2021-3 SDM2021-14 |
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| Conference Information | |
| Committee | ED SDM CPM |
| Conference Date | 2021-05-27 - 2021-05-27 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | CPM |
| Conference Code | 2021-05-ED-SDM-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Evaluation of I-V Characteristics of Zr/ZrOx/Pt Structure for Resistive Random Access Memory |
| Sub Title (in English) | |
| Keyword(1) | Resistive random access memory |
| Keyword(2) | non-volatile memories |
| Keyword(3) | Forming process |
| Keyword(4) | ZrOx film |
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| 1st Author's Name | Yuki Kawai |
| 1st Author's Affiliation | Kitami Institute of Technology (Kitami Inst. of Tech.) |
| 2nd Author's Name | Masaru Sato |
| 2nd Author's Affiliation | Kitami Institute of Technology (Kitami Inst. of Tech.) |
| 3rd Author's Name | Mayumi B. Takeyama |
| 3rd Author's Affiliation | Kitami Institute of Technology (Kitami Inst. of Tech.) |
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| Speaker | Author-1 |
| Date Time | 2021-05-27 14:10:00 |
| Presentation Time | 25 minutes |
| Registration for | CPM |
| Paper # | ED2021-3, CPM2021-3, SDM2021-14 |
| Volume (vol) | vol.121 |
| Number (no) | no.44(ED), no.45(CPM), no.46(SDM) |
| Page | pp.11-14 |
| #Pages | 4 |
| Date of Issue | 2021-05-20 (ED, CPM, SDM) |
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