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| Presentation | 2021-01-29 14:50 A study on precise extraction of parasitic resistances in InGaAs HEMTs Keigo Yaguchi (Tokyo Univ. of Science), Tomotaka Hosotani (Tohoku Univ.), Yohtaro Umeda, Kyoya Takano (Tokyo Univ. of Science), Tetsuya Suemitsu, Akira Satou (Tohoku Univ.)  ED2020-35 MW2020-88 Link to ES Tech. Rep. Archives: ED2020-35 MW2020-88 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In this paper, we propose a new method to extract the parasitic resistances of high electron mobility transistor (HEMT) with high accuracy. In the conventional extraction method, we use a specific low frequency to extracting some parameters of the parasitic resistances. However, this method may not be suitable to extracting the parasitic resistances because HEMT is expected to be applied to circuits in the millimeter wave band and submillimeter wave band. Therefore, in this paper, with the entire measurement frequency, we propose a new method to obtain the parasitic resistances and show the improvement of extraction accuracy. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | millimeter wave / HEMT / parasitic resistance / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 120, no. 354, MW2020-88, pp. 38-43, Jan. 2021. | |
| Paper # | MW2020-88 | |
| Date of Issue | 2021-01-22 (ED, MW) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2020-35 MW2020-88 Link to ES Tech. Rep. Archives: ED2020-35 MW2020-88 |
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| Conference Information | |
| Committee | MW ED |
| Conference Date | 2021-01-29 - 2021-01-29 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | MW |
| Conference Code | 2021-01-MW-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A study on precise extraction of parasitic resistances in InGaAs HEMTs |
| Sub Title (in English) | |
| Keyword(1) | millimeter wave |
| Keyword(2) | HEMT |
| Keyword(3) | parasitic resistance |
| Keyword(4) | |
| Keyword(5) | |
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| 1st Author's Name | Keigo Yaguchi |
| 1st Author's Affiliation | Tokyo university of Science (Tokyo Univ. of Science) |
| 2nd Author's Name | Tomotaka Hosotani |
| 2nd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 3rd Author's Name | Yohtaro Umeda |
| 3rd Author's Affiliation | Tokyo university of Science (Tokyo Univ. of Science) |
| 4th Author's Name | Kyoya Takano |
| 4th Author's Affiliation | Tokyo university of Science (Tokyo Univ. of Science) |
| 5th Author's Name | Tetsuya Suemitsu |
| 5th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 6th Author's Name | Akira Satou |
| 6th Author's Affiliation | Tohoku University (Tohoku Univ.) |
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| Speaker | Author-1 |
| Date Time | 2021-01-29 14:50:00 |
| Presentation Time | 25 minutes |
| Registration for | MW |
| Paper # | ED2020-35, MW2020-88 |
| Volume (vol) | vol.120 |
| Number (no) | no.353(ED), no.354(MW) |
| Page | pp.38-43 |
| #Pages | 6 |
| Date of Issue | 2021-01-22 (ED, MW) |
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