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| Presentation | 2020-12-02 16:30 Ferroelectric gate thin film transistor using oxide semiconductor Ga-Sn-O Tomoki Fukui, Kouki Nakagawa, Mutsumi Kimura (Ryukoku Univ)  EID2020-14 SDM2020-48 Link to ES Tech. Rep. Archives: EID2020-14 SDM2020-48 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We fabricated a ferroelectric-gate thin-film transistor (FeTFT) with an amorphous Ga-Sn-O (GTO) channel and a ferroelectric (Bi,La)₄Ti₃O₁₂ (BLT) gate insulator, and evaluated the TFT characteristics and the crystallinity of BLT by X-ray diffraction (XRD). First, in order to decrease the leakage current and to obtain TFT characteristics , the annealing conditions for good crystalline of BLT-thin-film by the RF magnetron sputtering method were considered. In this study, the annealing was performed at three different temperature. Second, the post-annealing conditions of GTO thin film to obtain high-performance drain current versus gate voltage (I-V) characteristics were investigated to prepare the excellent a-GTO channel. As a result, a TFT with mobility 1.58 cm² / Vs, SS value 0.84 V, threshold voltage Vth 5.05 V, on-current ION 0.16 mA, and memory window 3.5 V TFT, and counterclockwise hysteresis were confirmed at post-annealing 100 ℃.We think that increasing the ferroelectricity of BLT will improve the on-current. This is because ferroelectric film can induce large charge density owing to the spontaneous polarization. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Oxide Semiconductor / Ga-Sn-O(GTO) / Ferroelectric / (Bi,La)₄Ti₃O₁₂(BLT) / Ferroelectric-gate thin-film Transistor (FeTFT) / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 120, no. 272, EID2020-14, pp. 54-57, Dec. 2020. | |
| Paper # | EID2020-14 | |
| Date of Issue | 2020-11-25 (EID, SDM) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | EID2020-14 SDM2020-48 Link to ES Tech. Rep. Archives: EID2020-14 SDM2020-48 |
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| Conference Information | |
| Committee | EID SDM ITE-IDY |
| Conference Date | 2020-12-02 - 2020-12-02 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | EID |
| Conference Code | 2020-12-EID-SDM-IDY |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Ferroelectric gate thin film transistor using oxide semiconductor Ga-Sn-O |
| Sub Title (in English) | |
| Keyword(1) | Oxide Semiconductor |
| Keyword(2) | Ga-Sn-O(GTO) |
| Keyword(3) | Ferroelectric |
| Keyword(4) | (Bi,La)₄Ti₃O₁₂(BLT) |
| Keyword(5) | Ferroelectric-gate thin-film Transistor (FeTFT) |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Tomoki Fukui |
| 1st Author's Affiliation | Ryukoku Univercity (Ryukoku Univ) |
| 2nd Author's Name | Kouki Nakagawa |
| 2nd Author's Affiliation | Ryukoku Univercity (Ryukoku Univ) |
| 3rd Author's Name | Mutsumi Kimura |
| 3rd Author's Affiliation | Ryukoku Univercity (Ryukoku Univ) |
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| Speaker | Author-1 |
| Date Time | 2020-12-02 16:30:00 |
| Presentation Time | 15 minutes |
| Registration for | EID |
| Paper # | EID2020-14, SDM2020-48 |
| Volume (vol) | vol.120 |
| Number (no) | no.272(EID), no.273(SDM) |
| Page | pp.54-57 |
| #Pages | 4 |
| Date of Issue | 2020-11-25 (EID, SDM) |
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