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| Presentation | 2020-12-02 14:30 [Special Invited Talk] Defects control in oxide semiconductors at low-temperature and its application to flexible devices Yusaku Magari, Mamoru Furuta (Kochi Univ. of Technol.)  EID2020-10 SDM2020-44 Link to ES Tech. Rep. Archives: EID2020-10 SDM2020-44 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | High-performance In–Ga–Zn–O (IGZO) Schottky diodes (SDs) were fabricated using hydrogenated IGZO (IGZO:H) at a maximum process temperature of 150 °C. The IGZO:H was prepared by Ar+O2+H2 sputtering. IGZO:H SDs on a glass substrate exhibited superior electrical properties with a very high rectification ratio of 3.8×1010, an extremely large Schottky barrier height of 1.17 eV, and a low ideality factor of 1.07. The IGZO:H plays a key role in improving the Schottky interface quality, namely, the increase of Schottky barrier height and the decrease of oxygen vacancies, and the reduction of near-conduction band minimum states. Finally, we fabricated flexible IGZO:H SD on a polyethylene naphthalate substrate, and it exhibited recorded electrical properties with rectification ratio of 1.7×109, Schottky barrier height of 1.12 eV, and ideality factor of 1.10. To the best of our knowledge, both the IGZO:H SDs formed on glass and polyethylene naphthalate substrates achieved the best performance among the IGZO SDs reported to date. The proposed method successfully demonstrated great potential for future flexible electronics applications. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Oxide semiconductor / Hydrogenated In-Ga-Zn-O / Schottky diode / Flexible device / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 120, no. 272, EID2020-10, pp. 37-41, Dec. 2020. | |
| Paper # | EID2020-10 | |
| Date of Issue | 2020-11-25 (EID, SDM) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | EID2020-10 SDM2020-44 Link to ES Tech. Rep. Archives: EID2020-10 SDM2020-44 |
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| Conference Information | |
| Committee | EID SDM ITE-IDY |
| Conference Date | 2020-12-02 - 2020-12-02 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | EID |
| Conference Code | 2020-12-EID-SDM-IDY |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Defects control in oxide semiconductors at low-temperature and its application to flexible devices |
| Sub Title (in English) | |
| Keyword(1) | Oxide semiconductor |
| Keyword(2) | Hydrogenated In-Ga-Zn-O |
| Keyword(3) | Schottky diode |
| Keyword(4) | Flexible device |
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| Keyword(6) | |
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| 1st Author's Name | Yusaku Magari |
| 1st Author's Affiliation | Kochi University of Technology (Kochi Univ. of Technol.) |
| 2nd Author's Name | Mamoru Furuta |
| 2nd Author's Affiliation | Kochi University of Technology (Kochi Univ. of Technol.) |
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| Speaker | Author-1 |
| Date Time | 2020-12-02 14:30:00 |
| Presentation Time | 30 minutes |
| Registration for | EID |
| Paper # | EID2020-10, SDM2020-44 |
| Volume (vol) | vol.120 |
| Number (no) | no.272(EID), no.273(SDM) |
| Page | pp.37-41 |
| #Pages | 5 |
| Date of Issue | 2020-11-25 (EID, SDM) |
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