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| Presentation | 2020-12-02 10:30 Characterization of amorphous Ga-Sn-O thin film thermoelectric conversion element Yuhei Yamamoto, Tatuya Aramaki, Ryo Ito, Mutumi Kimura (Ryukoku Univ.)  EID2020-3 SDM2020-37 Link to ES Tech. Rep. Archives: EID2020-3 SDM2020-37 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Most of the exhaust heat generated from factories, automobiles, PCs, etc. is unused. Thermoelectric conversion device can convert the heat energy into electrical energy. And it’s attracting attention as a clean power generation method. Among them, thermoelectric materials with transparency and flexibility can be applied to power generation using window glass and IoT sensors. Therefore, we are researching thin film thermoelectric conversion devices using GTO thin films which are transparent, flexible and rare metal-free oxide semiconductors. In this study, we evaluated the dependence of the oxygen flow ratio during sputtering and temperature post-annealing after film formation of the GTO thermoelectric conversion device. The sample was annealed at a low temperature of 100 °C to 400 °C. The conductivity improved until the temperature after annealing reached 200°C. After that, when the annealing temperature exceeded 300°C, the conductivity decreased. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Thermoelectric conversion device / Seebeck effect / Oxide semiconductor / Transparent oxide semiconductor / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 120, no. 272, EID2020-3, pp. 9-12, Dec. 2020. | |
| Paper # | EID2020-3 | |
| Date of Issue | 2020-11-25 (EID, SDM) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | EID2020-3 SDM2020-37 Link to ES Tech. Rep. Archives: EID2020-3 SDM2020-37 |
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| Conference Information | |
| Committee | EID SDM ITE-IDY |
| Conference Date | 2020-12-02 - 2020-12-02 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | EID |
| Conference Code | 2020-12-EID-SDM-IDY |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of amorphous Ga-Sn-O thin film thermoelectric conversion element |
| Sub Title (in English) | |
| Keyword(1) | Thermoelectric conversion device |
| Keyword(2) | Seebeck effect |
| Keyword(3) | Oxide semiconductor |
| Keyword(4) | Transparent oxide semiconductor |
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| 1st Author's Name | Yuhei Yamamoto |
| 1st Author's Affiliation | Ryukoku University (Ryukoku Univ.) |
| 2nd Author's Name | Tatuya Aramaki |
| 2nd Author's Affiliation | Ryukoku University (Ryukoku Univ.) |
| 3rd Author's Name | Ryo Ito |
| 3rd Author's Affiliation | Ryukoku University (Ryukoku Univ.) |
| 4th Author's Name | Mutumi Kimura |
| 4th Author's Affiliation | Ryukoku University (Ryukoku Univ.) |
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| Speaker | Author-1 |
| Date Time | 2020-12-02 10:30:00 |
| Presentation Time | 15 minutes |
| Registration for | EID |
| Paper # | EID2020-3, SDM2020-37 |
| Volume (vol) | vol.120 |
| Number (no) | no.272(EID), no.273(SDM) |
| Page | pp.9-12 |
| #Pages | 4 |
| Date of Issue | 2020-11-25 (EID, SDM) |
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