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| Presentation | 2020-11-27 13:00 Optimization of lateral Mg activation in LEDs with GaN tunnel junctions Mikiko Tasaki, Kazuki Kiyohara, Mahito Odawara, Taichi Ito, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Nagoya Univ.)  ED2020-18 CPM2020-39 LQE2020-69 Link to ES Tech. Rep. Archives: ED2020-18 CPM2020-39 LQE2020-69 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Current confinement structures with GaN tunnel junctions have been utilized in LEDs and laser diodes. In such devices, a lateral Mg activation with high annealing temperature (725℃) and long time (30min) is required. In this study, we carried out Mg activations under various conditions, such as temperatures, time, and atmospheric gases (O2 or N2). We then found that higher light output power values were obtained by using 725℃ for 45min and 800℃ for 15min under oxygen gas. On the other hand, n-contact resistances were increased by the annealing under oxygen gas. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN tunnel junctions / lateral Mg activation / annealing / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 120, no. 256, LQE2020-69, pp. 67-70, Nov. 2020. | |
| Paper # | LQE2020-69 | |
| Date of Issue | 2020-11-19 (ED, CPM, LQE) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2020-18 CPM2020-39 LQE2020-69 Link to ES Tech. Rep. Archives: ED2020-18 CPM2020-39 LQE2020-69 |
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| Conference Information | |
| Committee | LQE CPM ED |
| Conference Date | 2020-11-26 - 2020-11-27 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2020-11-LQE-CPM-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Optimization of lateral Mg activation in LEDs with GaN tunnel junctions |
| Sub Title (in English) | |
| Keyword(1) | GaN tunnel junctions |
| Keyword(2) | lateral Mg activation |
| Keyword(3) | annealing |
| Keyword(4) | |
| Keyword(5) | |
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| Keyword(8) | |
| 1st Author's Name | Mikiko Tasaki |
| 1st Author's Affiliation | Meijo University (Meijo Univ.) |
| 2nd Author's Name | Kazuki Kiyohara |
| 2nd Author's Affiliation | Meijo University (Meijo Univ.) |
| 3rd Author's Name | Mahito Odawara |
| 3rd Author's Affiliation | Meijo University (Meijo Univ.) |
| 4th Author's Name | Taichi Ito |
| 4th Author's Affiliation | Meijo University (Meijo Univ.) |
| 5th Author's Name | Tetsuya Takeuchi |
| 5th Author's Affiliation | Meijo University (Meijo Univ.) |
| 6th Author's Name | Satoshi Kamiyama |
| 6th Author's Affiliation | Meijo University (Meijo Univ.) |
| 7th Author's Name | Motoaki Iwaya |
| 7th Author's Affiliation | Meijo University (Meijo Univ.) |
| 8th Author's Name | Isamu Akasaki |
| 8th Author's Affiliation | Nagoya University (Nagoya Univ.) |
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| Speaker | Author-1 |
| Date Time | 2020-11-27 13:00:00 |
| Presentation Time | 20 minutes |
| Registration for | LQE |
| Paper # | ED2020-18, CPM2020-39, LQE2020-69 |
| Volume (vol) | vol.120 |
| Number (no) | no.254(ED), no.255(CPM), no.256(LQE) |
| Page | pp.67-70 |
| #Pages | 4 |
| Date of Issue | 2020-11-19 (ED, CPM, LQE) |
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