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| Presentation | 2020-11-26 13:30 High-breakdown-voltage AlGaN channel HFETs with selective-area regrowth ohmic contacts Akiyoshi Inoue, Hiroki Harada, Mizuki Yamanaka, Takashi Egawa, Makoto Miyoshi (NIT)  ED2020-7 CPM2020-28 LQE2020-58 Link to ES Tech. Rep. Archives: ED2020-7 CPM2020-28 LQE2020-58 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Al0.19Ga0.81N-channel metal-insulator-semiconductor (MIS) HFETs employing a quaternary AlGaInN barrier layer and a selectively regrown n+-GaN contact layer were fabricated. The ohmic contacts were formed via the self-alignment selective-area growth (SAG) process consisting of the local-area recess etching and subsequent refilling process with a highly-Si-doped n+-GaN layer by metalorganic chemical vapor deposition (MOCVD). The contact resistance is drastically reduced from 10.5 Ωmm to 2.5 Ωmm by using the self-alignment SAG contacts. In addition, the fabricated MIS-HFETs exhibited good pinch-off characteristics with highly improved on-state performance. That is, the device with a gate length of 1.5 μm and a drain-to-source length of 9.5 μm exhibited a high drain current density of over 300 mAmm-1 with a drain-to-source resistance of approximately 25 Ω mm. Furthermore, the fabricated devices also show a high off-state breakdown voltage of 1220 V at a gate-to-drain length of 10 μm. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Group-III nitrides / AlGaN-channel / AlGaInN / HFET / High breakdown voltage / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 120, no. 254, ED2020-7, pp. 25-28, Nov. 2020. | |
| Paper # | ED2020-7 | |
| Date of Issue | 2020-11-19 (ED, CPM, LQE) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2020-7 CPM2020-28 LQE2020-58 Link to ES Tech. Rep. Archives: ED2020-7 CPM2020-28 LQE2020-58 |
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| Conference Information | |
| Committee | LQE CPM ED |
| Conference Date | 2020-11-26 - 2020-11-27 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2020-11-LQE-CPM-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High-breakdown-voltage AlGaN channel HFETs with selective-area regrowth ohmic contacts |
| Sub Title (in English) | |
| Keyword(1) | Group-III nitrides |
| Keyword(2) | AlGaN-channel |
| Keyword(3) | AlGaInN |
| Keyword(4) | HFET |
| Keyword(5) | High breakdown voltage |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Akiyoshi Inoue |
| 1st Author's Affiliation | Nagoya Institute of Technology (NIT) |
| 2nd Author's Name | Hiroki Harada |
| 2nd Author's Affiliation | Nagoya Institute of Technology (NIT) |
| 3rd Author's Name | Mizuki Yamanaka |
| 3rd Author's Affiliation | Nagoya Institute of Technology (NIT) |
| 4th Author's Name | Takashi Egawa |
| 4th Author's Affiliation | Nagoya Institute of Technology (NIT) |
| 5th Author's Name | Makoto Miyoshi |
| 5th Author's Affiliation | Nagoya Institute of Technology (NIT) |
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| Speaker | Author-1 |
| Date Time | 2020-11-26 13:30:00 |
| Presentation Time | 20 minutes |
| Registration for | ED |
| Paper # | ED2020-7, CPM2020-28, LQE2020-58 |
| Volume (vol) | vol.120 |
| Number (no) | no.254(ED), no.255(CPM), no.256(LQE) |
| Page | pp.25-28 |
| #Pages | 4 |
| Date of Issue | 2020-11-19 (ED, CPM, LQE) |
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