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Paper Abstract and Keywords
Presentation 2020-11-26 15:00
Growth of GaN on AlN template with atomic-level flatness for High Electron Mobility Transistor
Tatsuya Shirato, Kenjiro Uesugi, Shigeyuki Kuboya, Kanako Shojiki, Hideto Miyake (Mie Univ.) ED2020-11 CPM2020-32 LQE2020-62
Abstract (in Japanese) (See Japanese page) 
(in English) We investigated the effect of carrier gas on GaN surface morphology. Bunched step-and-terrace structures and pits were formed on the GaN surface grown with H2 carrier gas, reflecting the 3D growth in the initial stage. Meanwhile, relatively flat surface was achieved with N2 carrier gas, since the deposition reaction of GaN was promoted according to the increase of the supersaturation. Furthermore, on the GaN which was grown under N2 carrier gas and has a flat surface morphology, the AlGaN barrier layer and GaN cap layer were sequentially stacked. Then, Hall mobility and carrier concentration were evaluated by Hall effect measurement. As a result, 770 cm2 V-1s-1 was obtained as the highest value.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / MOVPE / Carrier gas / 2DEG / Electron mobility / / /  
Reference Info. IEICE Tech. Rep., vol. 120, no. 254, ED2020-11, pp. 41-44, Nov. 2020.
Paper # ED2020-11 
Date of Issue 2020-11-19 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee LQE CPM ED  
Conference Date 2020-11-26 - 2020-11-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2020-11-LQE-CPM-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Growth of GaN on AlN template with atomic-level flatness for High Electron Mobility Transistor 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) MOVPE  
Keyword(3) Carrier gas  
Keyword(4) 2DEG  
Keyword(5) Electron mobility  
1st Author's Name Tatsuya Shirato  
1st Author's Affiliation Mie University (Mie Univ.)
2nd Author's Name Kenjiro Uesugi  
2nd Author's Affiliation Mie University (Mie Univ.)
3rd Author's Name Shigeyuki Kuboya  
3rd Author's Affiliation Mie University (Mie Univ.)
4th Author's Name Kanako Shojiki  
4th Author's Affiliation Mie University (Mie Univ.)
5th Author's Name Hideto Miyake  
5th Author's Affiliation Mie University (Mie Univ.)
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Date Time 2020-11-26 15:00:00 
Presentation Time 20 
Registration for ED 
Paper # IEICE-ED2020-11,IEICE-CPM2020-32,IEICE-LQE2020-62 
Volume (vol) IEICE-120 
Number (no) no.254(ED), no.255(CPM), no.256(LQE) 
Page pp.41-44 
#Pages IEICE-4 
Date of Issue IEICE-ED-2020-11-19,IEICE-CPM-2020-11-19,IEICE-LQE-2020-11-19 

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