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| Presentation | 2020-11-26 11:15 Study on p/n conductivity control of epitaxial AlInN films Taiki Nakabayashi, Haruka Takada, Takashi Egawa, Makoto Miyoshi (NIT), Tetsuya Takeuchi (Meijo Univ.)  ED2020-4 CPM2020-25 LQE2020-55 Link to ES Tech. Rep. Archives: ED2020-4 CPM2020-25 LQE2020-55 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In this study, we attempted the p/n conductivity control of epitaxial AlInN films grown by metalorganic chemical vapor deposition (MOCVD) by means of the impurity-doping of Si and Mg atoms and the polarization-doping. First, The Si-doped AlInN films with a Si concentration of approximately 8 × 10^18 cm^-3 with a thickness of 300 nm were grown nearly lattice-matched to c-plane GaN-on-sapphire templates. By using TLM method, the vertical direction resistivity of the 300-nm-thick n-type AlInN film was estimated to be 5.8×10^-4 Ωcm^2. Then, Mg doped AlInN films with a thickness of approximately 100 nm were grown on c-plane GaN-on-sapphire templates, the AlInN film showed a relative smooth surface at a high Mg concentration of approximately 1.5 × 10^19 cm^-3. Finally, graded AlInN films with a thickness of 100 nm were grown on c-plane GaN-on-sapphire templates, aiming at the generation of polarization-induced holes. It was confirmed that an AlInN film was grown with an InN molar fraction variation ranging from 0.14 to 0.19. The Hall effect measurement showed less temperature dependence of holes, which confirmed the generation of polarization-induced holes. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | n-type AlInN / Mg doped AlInN / polarization-doping / graded AlInN / MOCVD / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 120, no. 256, LQE2020-55, pp. 13-16, Nov. 2020. | |
| Paper # | LQE2020-55 | |
| Date of Issue | 2020-11-19 (ED, CPM, LQE) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2020-4 CPM2020-25 LQE2020-55 Link to ES Tech. Rep. Archives: ED2020-4 CPM2020-25 LQE2020-55 |
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| Conference Information | |
| Committee | LQE CPM ED |
| Conference Date | 2020-11-26 - 2020-11-27 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2020-11-LQE-CPM-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study on p/n conductivity control of epitaxial AlInN films |
| Sub Title (in English) | |
| Keyword(1) | n-type AlInN |
| Keyword(2) | Mg doped AlInN |
| Keyword(3) | polarization-doping |
| Keyword(4) | graded AlInN |
| Keyword(5) | MOCVD |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Taiki Nakabayashi |
| 1st Author's Affiliation | Nagoya Institute Of Technology (NIT) |
| 2nd Author's Name | Haruka Takada |
| 2nd Author's Affiliation | Nagoya Institute Of Technology (NIT) |
| 3rd Author's Name | Takashi Egawa |
| 3rd Author's Affiliation | Nagoya Institute Of Technology (NIT) |
| 4th Author's Name | Makoto Miyoshi |
| 4th Author's Affiliation | Nagoya Institute Of Technology (NIT) |
| 5th Author's Name | Tetsuya Takeuchi |
| 5th Author's Affiliation | Meijo University (Meijo Univ.) |
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| Speaker | Author-1 |
| Date Time | 2020-11-26 11:15:00 |
| Presentation Time | 20 minutes |
| Registration for | LQE |
| Paper # | ED2020-4, CPM2020-25, LQE2020-55 |
| Volume (vol) | vol.120 |
| Number (no) | no.254(ED), no.255(CPM), no.256(LQE) |
| Page | pp.13-16 |
| #Pages | 4 |
| Date of Issue | 2020-11-19 (ED, CPM, LQE) |
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