Paper Abstract and Keywords |
Presentation |
2020-11-26 13:50
Estimation of electrical properties of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD Shunichi Yokoi, Toshiharu Kubo, Takashi Egawa (Nagoya Inst. of Tech.) ED2020-8 CPM2020-29 LQE2020-59 Link to ES Tech. Rep. Archives: ED2020-8 CPM2020-29 LQE2020-59 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Since SiO2 has a large band gap of approximately 9 eV, the interface characteristics of the interface and gate leakage characteristics can be good by forming a double insulator film of Al2O3 and SiO2 by atomic layer deposition (ALD). First, SiO2/ Al2O3/AlGaN / GaN MIS-HEMT was prepared using ALD, and its I-V characteristics were evaluated including temperature dependence. Furthermore, an AlGaN / GaN MIS-HEMT having a recess structure was prepared using a double insulator, and its electrical characteristics were evaluated. The dynamic threshold voltage shift (⊿Vth) was 0.2 V , and good interfacial characteristics were obtained. We confirmed that the threshold voltage shifted from -4.8 V to 0.2 V by using the recess structure. As the measurement temperature increased, Ig increased by more than 4 orders of magnitude on both the positive bias side and the negative bias side under the measurement conditions from room temperature to 200 °C. The Ig at a Vg of 8 V under room temperature was 1.5×10-7 mA/mm, which indicates both ⊿Vth and Ig can be suppressed by using SiO2/Al2O3 double layer structures. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN / MIS / HEMT / ALD / PDA / SiO2 / Al2O3 / |
Reference Info. |
IEICE Tech. Rep., vol. 120, no. 254, ED2020-8, pp. 29-32, Nov. 2020. |
Paper # |
ED2020-8 |
Date of Issue |
2020-11-19 (ED, CPM, LQE) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2020-8 CPM2020-29 LQE2020-59 Link to ES Tech. Rep. Archives: ED2020-8 CPM2020-29 LQE2020-59 |
Conference Information |
Committee |
LQE CPM ED |
Conference Date |
2020-11-26 - 2020-11-27 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Online |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
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Paper Information |
Registration To |
ED |
Conference Code |
2020-11-LQE-CPM-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Estimation of electrical properties of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD |
Sub Title (in English) |
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Keyword(1) |
GaN |
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MIS |
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HEMT |
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ALD |
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PDA |
Keyword(6) |
SiO2 |
Keyword(7) |
Al2O3 |
Keyword(8) |
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1st Author's Name |
Shunichi Yokoi |
1st Author's Affiliation |
Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
2nd Author's Name |
Toshiharu Kubo |
2nd Author's Affiliation |
Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
3rd Author's Name |
Takashi Egawa |
3rd Author's Affiliation |
Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
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Speaker |
Author-1 |
Date Time |
2020-11-26 13:50:00 |
Presentation Time |
20 minutes |
Registration for |
ED |
Paper # |
ED2020-8, CPM2020-29, LQE2020-59 |
Volume (vol) |
vol.120 |
Number (no) |
no.254(ED), no.255(CPM), no.256(LQE) |
Page |
pp.29-32 |
#Pages |
4 |
Date of Issue |
2020-11-19 (ED, CPM, LQE) |
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