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Paper Abstract and Keywords
Presentation 2020-11-26 13:50
Estimation of electrical properties of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD
Shunichi Yokoi, Toshiharu Kubo, Takashi Egawa (Nagoya Inst. of Tech.) ED2020-8 CPM2020-29 LQE2020-59 Link to ES Tech. Rep. Archives: ED2020-8 CPM2020-29 LQE2020-59
Abstract (in Japanese) (See Japanese page) 
(in English) Since SiO2 has a large band gap of approximately 9 eV, the interface characteristics of the interface and gate leakage characteristics can be good by forming a double insulator film of Al2O3 and SiO2 by atomic layer deposition (ALD). First, SiO2/ Al2O3/AlGaN / GaN MIS-HEMT was prepared using ALD, and its I-V characteristics were evaluated including temperature dependence. Furthermore, an AlGaN / GaN MIS-HEMT having a recess structure was prepared using a double insulator, and its electrical characteristics were evaluated. The dynamic threshold voltage shift (⊿Vth) was 0.2 V , and good interfacial characteristics were obtained. We confirmed that the threshold voltage shifted from -4.8 V to 0.2 V by using the recess structure. As the measurement temperature increased, Ig increased by more than 4 orders of magnitude on both the positive bias side and the negative bias side under the measurement conditions from room temperature to 200 °C. The Ig at a Vg of 8 V under room temperature was 1.5×10-7 mA/mm, which indicates both ⊿Vth and Ig can be suppressed by using SiO2/Al2O3 double layer structures.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / MIS / HEMT / ALD / PDA / SiO2 / Al2O3 /  
Reference Info. IEICE Tech. Rep., vol. 120, no. 254, ED2020-8, pp. 29-32, Nov. 2020.
Paper # ED2020-8 
Date of Issue 2020-11-19 (ED, CPM, LQE) 
ISSN Online edition: ISSN 2432-6380
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Conference Information
Committee LQE CPM ED  
Conference Date 2020-11-26 - 2020-11-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2020-11-LQE-CPM-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Estimation of electrical properties of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) MIS  
Keyword(3) HEMT  
Keyword(4) ALD  
Keyword(5) PDA  
Keyword(6) SiO2  
Keyword(7) Al2O3  
Keyword(8)  
1st Author's Name Shunichi Yokoi  
1st Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
2nd Author's Name Toshiharu Kubo  
2nd Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
3rd Author's Name Takashi Egawa  
3rd Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
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Speaker Author-1 
Date Time 2020-11-26 13:50:00 
Presentation Time 20 minutes 
Registration for ED 
Paper # ED2020-8, CPM2020-29, LQE2020-59 
Volume (vol) vol.120 
Number (no) no.254(ED), no.255(CPM), no.256(LQE) 
Page pp.29-32 
#Pages
Date of Issue 2020-11-19 (ED, CPM, LQE) 


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