Paper Abstract and Keywords |
Presentation |
2020-11-19 15:20
[Invited Talk]
A technique for phase-detection auto focus under near-infrared-ray incidence in a back-side illuminated CMOS image sensor pixel Tatsuya Kunikiyo, Hidenori Sato, Takeshi Kamino, Koji Iizuka, Ken'ichiro Sonoda, Tomohiro Yamashita (Renesas Electronics) SDM2020-26 Link to ES Tech. Rep. Archives: SDM2020-26 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
A novel phase-detection auto focus (PDAF) technique for incident 850 nm plane wave is demonstrated using Ge-on-Si layer and deep trench isolation (DTI), which are locally arranged on light receiving surface (LRS) of crystalline silicon (c-Si). No metal light shielding film (LSF) for pupil division is formed. The key concept of the present work for PDAF is to perform the pupil division by the locally arranged Ge-on-Si layer in a pixel according to incident angle. The present technique can enhance the accuracy of AF under low-illuminated condition. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
phase-detection auto focus / near infrared ray / Ge-on-Si / image sensor pixel / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 120, no. 239, SDM2020-26, pp. 21-24, Nov. 2020. |
Paper # |
SDM2020-26 |
Date of Issue |
2020-11-12 (SDM) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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SDM2020-26 Link to ES Tech. Rep. Archives: SDM2020-26 |
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