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Paper Abstract and Keywords
Presentation 2020-10-22 15:50
Effect of Drain-to-Source Voltage on Random Telegraph Noise Based on Statistical Analysis
Ryo Akimoto, Rihito Kuroda (Tohoku Univ.), Akinobu Teramoto (Hiroshima Univ.), Takezo Mawaki, Shinya Ichino, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.) SDM2020-21
Abstract (in Japanese) (See Japanese page) 
(in English) In this work, temporal noise characteristics of 11520 MOSFETs were measured for each of rectangular and trapezoidal shaped gates, and characteristics of random telegraph noise (RTN), such as amplitude and time constants under various drain-to-source voltage (VDS) conditions were extracted and analyzed. It was found that RTN is dominated by traps at the minimum gate width in the channel formed under each of the operating bias conditions, and traps at the source side are most influential under a large VDS . The trap location along the drain-source direction is estimated by the VDS dependencies of RTN characteristics.
Keyword (in Japanese) (See Japanese page) 
(in English) Array Test Circuit / Drain-to-Source Voltage / Random Telegraph Noise (RTN) / Trapezoidal Gate Transistor / / / /  
Reference Info. IEICE Tech. Rep., vol. 120, no. 205, SDM2020-21, pp. 34-39, Oct. 2020.
Paper # SDM2020-21 
Date of Issue 2020-10-15 (SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2020-10-22 - 2020-10-22 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process Science and New Process Technology 
Paper Information
Registration To SDM 
Conference Code 2020-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effect of Drain-to-Source Voltage on Random Telegraph Noise Based on Statistical Analysis 
Sub Title (in English)  
Keyword(1) Array Test Circuit  
Keyword(2) Drain-to-Source Voltage  
Keyword(3) Random Telegraph Noise (RTN)  
Keyword(4) Trapezoidal Gate Transistor  
1st Author's Name Ryo Akimoto  
1st Author's Affiliation Thoku University (Tohoku Univ.)
2nd Author's Name Rihito Kuroda  
2nd Author's Affiliation Thoku University (Tohoku Univ.)
3rd Author's Name Akinobu Teramoto  
3rd Author's Affiliation Hiroshima University (Hiroshima Univ.)
4th Author's Name Takezo Mawaki  
4th Author's Affiliation Thoku University (Tohoku Univ.)
5th Author's Name Shinya Ichino  
5th Author's Affiliation Thoku University (Tohoku Univ.)
6th Author's Name Tomoyuki Suwa  
6th Author's Affiliation Thoku University (Tohoku Univ.)
7th Author's Name Shigetoshi Sugawa  
7th Author's Affiliation Thoku University (Tohoku Univ.)
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Date Time 2020-10-22 15:50:00 
Presentation Time 30 
Registration for SDM 
Paper # IEICE-SDM2020-21 
Volume (vol) IEICE-120 
Number (no) no.205 
Page pp.34-39 
#Pages IEICE-6 
Date of Issue IEICE-SDM-2020-10-15 

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