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Paper Abstract and Keywords
Presentation 2020-10-05 14:20
Recent progress on piezo-electronic magnetoresistive devices using giant magnetostrictive SmFe2 thin films
Soki Urashita, Hayato Onozawa, Ryota Kitagawa, Masato Tomita, Takashi Harumoto, Ji Shi, Yoshio Nakamura, Yota Takamura, Shigeki Nakagawa (Tokyo Tech.) MRIS2020-3
Abstract (in Japanese) (See Japanese page) 
(in English) In magnetic tunnel junctions (MTJs) for magnetoresistive random access memory, a trade-off relationship between the critical current density for magnetization reversal and the thermal stability of the free layer exist. To overcome this tradeoff relationship, we have proposed a piezo-electronic magnetic tunnel junctions (PE-MTJ) consisting of a MTJ using a SmFe2 free layer with negative giant magnetostriction and a pressurized structure composed of a piezoelectric material and metal electrode. In this report, we discuss potential issues in device processing to fabricate MTJ using SmFe2 thin film and report the experimental results of fabricated MTJs. According to magnetic properties for the piler with various diameter, the side of SmFe2 pilers slightly got oxidized by exposure to the air after etching process. The MTJs showed parallel/anti-parallel magnetic configuration and tunneling transport behavior.
Keyword (in Japanese) (See Japanese page) 
(in English) Magnetostriction / Inverse magnetostriction effect / Magnetoresistive random access memory / MRAM / / / /  
Reference Info. IEICE Tech. Rep., vol. 120, no. 180, MRIS2020-3, pp. 12-15, Oct. 2020.
Paper # MRIS2020-3 
Date of Issue 2020-09-28 (MRIS) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee MRIS ITE-MMS  
Conference Date 2020-10-05 - 2020-10-05 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Recording Head, Spintronics, Solid State Memory, Media, etc. 
Paper Information
Registration To MRIS 
Conference Code 2020-10-MRIS-MMS 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Recent progress on piezo-electronic magnetoresistive devices using giant magnetostrictive SmFe2 thin films 
Sub Title (in English)  
Keyword(1) Magnetostriction  
Keyword(2) Inverse magnetostriction effect  
Keyword(3) Magnetoresistive random access memory  
Keyword(4) MRAM  
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1st Author's Name Soki Urashita  
1st Author's Affiliation Tokyo Institute of technology (Tokyo Tech.)
2nd Author's Name Hayato Onozawa  
2nd Author's Affiliation Tokyo Institute of technology (Tokyo Tech.)
3rd Author's Name Ryota Kitagawa  
3rd Author's Affiliation Tokyo Institute of technology (Tokyo Tech.)
4th Author's Name Masato Tomita  
4th Author's Affiliation Tokyo Institute of technology (Tokyo Tech.)
5th Author's Name Takashi Harumoto  
5th Author's Affiliation Tokyo Institute of technology (Tokyo Tech.)
6th Author's Name Ji Shi  
6th Author's Affiliation Tokyo Institute of technology (Tokyo Tech.)
7th Author's Name Yoshio Nakamura  
7th Author's Affiliation Tokyo Institute of technology (Tokyo Tech.)
8th Author's Name Yota Takamura  
8th Author's Affiliation Tokyo Institute of technology (Tokyo Tech.)
9th Author's Name Shigeki Nakagawa  
9th Author's Affiliation Tokyo Institute of technology (Tokyo Tech.)
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Speaker
Date Time 2020-10-05 14:20:00 
Presentation Time 25 
Registration for MRIS 
Paper # IEICE-MRIS2020-3 
Volume (vol) IEICE-120 
Number (no) no.180 
Page pp.12-15 
#Pages IEICE-4 
Date of Issue IEICE-MRIS-2020-09-28 


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