Paper Abstract and Keywords |
Presentation |
2020-10-05 14:20
Recent progress on piezo-electronic magnetoresistive devices using giant magnetostrictive SmFe2 thin films Soki Urashita, Hayato Onozawa, Ryota Kitagawa, Masato Tomita, Takashi Harumoto, Ji Shi, Yoshio Nakamura, Yota Takamura, Shigeki Nakagawa (Tokyo Tech.) MRIS2020-3 Link to ES Tech. Rep. Archives: MRIS2020-3 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In magnetic tunnel junctions (MTJs) for magnetoresistive random access memory, a trade-off relationship between the critical current density for magnetization reversal and the thermal stability of the free layer exist. To overcome this tradeoff relationship, we have proposed a piezo-electronic magnetic tunnel junctions (PE-MTJ) consisting of a MTJ using a SmFe2 free layer with negative giant magnetostriction and a pressurized structure composed of a piezoelectric material and metal electrode. In this report, we discuss potential issues in device processing to fabricate MTJ using SmFe2 thin film and report the experimental results of fabricated MTJs. According to magnetic properties for the piler with various diameter, the side of SmFe2 pilers slightly got oxidized by exposure to the air after etching process. The MTJs showed parallel/anti-parallel magnetic configuration and tunneling transport behavior. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Magnetostriction / Inverse magnetostriction effect / Magnetoresistive random access memory / MRAM / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 120, no. 180, MRIS2020-3, pp. 12-15, Oct. 2020. |
Paper # |
MRIS2020-3 |
Date of Issue |
2020-09-28 (MRIS) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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MRIS2020-3 Link to ES Tech. Rep. Archives: MRIS2020-3 |
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