Paper Abstract and Keywords |
Presentation |
2020-08-07 09:30
[Invited Talk]
Understanding the Origin of Low-frequency Noise in Cryo-CMOS Toward Long-coherence-time Si Spin Qubit Hiroshi Oka, Takashi Matsukawa, Kimihiko Kato, Shota Iizuka, Wataru Mizubayashi, Kazuhiko Endo, Tetsuji Yasuda, Takahiro Mori (AIST) SDM2020-6 ICD2020-6 Link to ES Tech. Rep. Archives: SDM2020-6 ICD2020-6 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Si quantum computer has attracted a significant attention due to its potential for large-scale integration using semiconductor manufacturing technology. In order to develop the Si quantum computer, it is necessary to improve the coherence-time of Si spin qubit. The coherence-time of Si spin qubit is limited by charge noise. However, the origin of charge noise generated at cryogenic temperature, which is the operating temperature of Si spin qubit, has not been clarified. This paper reviews the technological challenges of Si spin qubit in terms of noise and reports our recent results to reveal the origin of cryogenic noise that limits the performance of Si quantum computer. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Si quantum computer / Spin qubit / Cryogenic temperature / Low-frequency noise / Cryo-CMOS / / / |
Reference Info. |
IEICE Tech. Rep., vol. 120, no. 126, SDM2020-6, pp. 25-30, Aug. 2020. |
Paper # |
SDM2020-6 |
Date of Issue |
2020-07-30 (SDM, ICD) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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SDM2020-6 ICD2020-6 Link to ES Tech. Rep. Archives: SDM2020-6 ICD2020-6 |
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