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| Presentation | 2020-02-07 10:10 [Invited Talk] Stability of Cu Interconnect Surface after post CMP Cleaning Yasuhiro Kawase, Toshiaki Shibata, Tomohiro Kusano (MCC), Ken Harada (imec), Kan Takeshita (MCC)  SDM2019-90 Link to ES Tech. Rep. Archives: SDM2019-90 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | At present, more than 12 Cu interconnect layers have been formed in advanced semiconductor devices and each layer is plated by Cu and it is planarized by CMP (Chemical Mechanical Polishing). About 24 hours after performing CMP and after post CMP cleaning with the progress of miniaturization of copper interconnect, extraordinary growth of copper oxide on copper fine interconnect began to be recognized over time. In this paper, we will report on the stability of copper interconnect surface after post CMP cleaning in device manufacturing. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | CMP / post CMP Cleaning / Extraordinary Growth / SERA / KFM / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 119, no. 410, SDM2019-90, pp. 9-14, Feb. 2020. | |
| Paper # | SDM2019-90 | |
| Date of Issue | 2020-01-31 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2019-90 Link to ES Tech. Rep. Archives: SDM2019-90 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2020-02-07 - 2020-02-07 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Tokyo University-Hongo |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2020-02-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Stability of Cu Interconnect Surface after post CMP Cleaning |
| Sub Title (in English) | |
| Keyword(1) | CMP |
| Keyword(2) | post CMP Cleaning |
| Keyword(3) | Extraordinary Growth |
| Keyword(4) | SERA |
| Keyword(5) | KFM |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Yasuhiro Kawase |
| 1st Author's Affiliation | Mitsubishi Chemical Corporation (MCC) |
| 2nd Author's Name | Toshiaki Shibata |
| 2nd Author's Affiliation | Mitsubishi Chemical Corporation (MCC) |
| 3rd Author's Name | Tomohiro Kusano |
| 3rd Author's Affiliation | Mitsubishi Chemical Corporation (MCC) |
| 4th Author's Name | Ken Harada |
| 4th Author's Affiliation | Interuniversity Microelectronics Centre (imec) |
| 5th Author's Name | Kan Takeshita |
| 5th Author's Affiliation | Mitsubishi Chemical Corporation (MCC) |
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| Speaker | Author-1 |
| Date Time | 2020-02-07 10:10:00 |
| Presentation Time | 35 minutes |
| Registration for | SDM |
| Paper # | SDM2019-90 |
| Volume (vol) | vol.119 |
| Number (no) | no.410 |
| Page | pp.9-14 |
| #Pages | 6 |
| Date of Issue | 2020-01-31 (SDM) |
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