| IEICE Technical Committee Submission System Conference Paper's Information |
Online Proceedings [Sign in] Tech. Rep. Archives |
| Go Top Page | Go Previous | [Japanese] / [English] |
| Paper Abstract and Keywords | ||
| Presentation | 2020-01-31 11:45 Simple Photoelectrochemical Etching for Recess Gate GaN HEMT Fumimasa Horikiri, Noboru Fukuhara (SCIOCS), Masachika Toguchi, Kazuki Miwa (Hokaido Univ.), Yoshinobu Narita, Osamu Ichikawa, Ryota Isono, Takeshi Tanaka (SCIOCS), Taketomo Sato (Hokaido Univ.)  ED2019-98 MW2019-132 Link to ES Tech. Rep. Archives: ED2019-98 MW2019-132 |
|
| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Photoelectrochemical (PEC) etching is a promising technology for fabricating GaN devices with low damage. In the simple contactless PEC etching process including K2S2O8 to the electrolyte as an oxidizing agent, a sample is dipped into an electrolyte under UV irradiation. The oxidizing agent consumes photo-generated extra electrons, however, the details in the contactless PEC etching of epi grown on semi-insulating substrate was not clear. In this study, we describes that cathode design of the GaN HEMT epi sample for applying the simple contactless PEC etching to gate-recess process. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN / Electrochemical / Etching / Recess process / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 119, no. 408, ED2019-98, pp. 25-28, Jan. 2020. | |
| Paper # | ED2019-98 | |
| Date of Issue | 2020-01-24 (ED, MW) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2019-98 MW2019-132 Link to ES Tech. Rep. Archives: ED2019-98 MW2019-132 |
|
| Conference Information | |
| Committee | ED MW |
| Conference Date | 2020-01-31 - 2020-01-31 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Compound semiconductor, High speed and High frequency devices/Microwave technologies |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2020-01-ED-MW |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Simple Photoelectrochemical Etching for Recess Gate GaN HEMT |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | Electrochemical |
| Keyword(3) | Etching |
| Keyword(4) | Recess process |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Fumimasa Horikiri |
| 1st Author's Affiliation | SCIOCS Company Ltd. (SCIOCS) |
| 2nd Author's Name | Noboru Fukuhara |
| 2nd Author's Affiliation | SCIOCS Company Ltd. (SCIOCS) |
| 3rd Author's Name | Masachika Toguchi |
| 3rd Author's Affiliation | Hokkaido University (Hokaido Univ.) |
| 4th Author's Name | Kazuki Miwa |
| 4th Author's Affiliation | Hokkaido University (Hokaido Univ.) |
| 5th Author's Name | Yoshinobu Narita |
| 5th Author's Affiliation | SCIOCS Company Ltd. (SCIOCS) |
| 6th Author's Name | Osamu Ichikawa |
| 6th Author's Affiliation | SCIOCS Company Ltd. (SCIOCS) |
| 7th Author's Name | Ryota Isono |
| 7th Author's Affiliation | SCIOCS Company Ltd. (SCIOCS) |
| 8th Author's Name | Takeshi Tanaka |
| 8th Author's Affiliation | SCIOCS Company Ltd. (SCIOCS) |
| 9th Author's Name | Taketomo Sato |
| 9th Author's Affiliation | Hokkaido University (Hokaido Univ.) |
| 10th Author's Name | |
| 10th Author's Affiliation | () |
| 11th Author's Name | |
| 11th Author's Affiliation | () |
| 12th Author's Name | |
| 12th Author's Affiliation | () |
| 13th Author's Name | |
| 13th Author's Affiliation | () |
| 14th Author's Name | |
| 14th Author's Affiliation | () |
| 15th Author's Name | |
| 15th Author's Affiliation | () |
| 16th Author's Name | |
| 16th Author's Affiliation | () |
| 17th Author's Name | |
| 17th Author's Affiliation | () |
| 18th Author's Name | |
| 18th Author's Affiliation | () |
| Speaker | Author-1 |
| Date Time | 2020-01-31 11:45:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2019-98, MW2019-132 |
| Volume (vol) | vol.119 |
| Number (no) | no.408(ED), no.409(MW) |
| Page | pp.25-28 |
| #Pages | 4 |
| Date of Issue | 2020-01-24 (ED, MW) |
[Return to Top Page]