Paper Abstract and Keywords |
Presentation |
2020-01-31 11:20
GaN-on-Diamond HEMTs fabricated by Surface-Activated Room-Temperature Bonding Shuichi Hiza (Mitsubishi Electric), Masahiro Fujikawa (Mitsubishi Elctric), Yuki Takiguchi, Kunihiko Nishimura, Eiji Yagyu (Mitsubishi Electric), Takashi Matsumae, Yuichi Kurashima, Hideki Takagi (AIST), Mikio Yamamuka (Mitsubishi Electric) ED2019-97 MW2019-131 Link to ES Tech. Rep. Archives: ED2019-97 MW2019-131 |
Abstract |
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(in English) |
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Keyword |
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(in English) |
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Reference Info. |
IEICE Tech. Rep., vol. 119, no. 408, ED2019-97, pp. 21-24, Jan. 2020. |
Paper # |
ED2019-97 |
Date of Issue |
2020-01-24 (ED, MW) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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ED2019-97 MW2019-131 Link to ES Tech. Rep. Archives: ED2019-97 MW2019-131 |
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