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Paper Abstract and Keywords
Presentation 2020-01-31 16:00
Operation Principle and Structure of normally-off Floating Gate GaN HEMT with Injection Gate
Nagumo Kenshi, Kimoto Daiki, Suwa Tomoyuki (Tohoku Univ.), Teramoto Akinobu (Hiroshima Univ.), Shirota Riichiro, Tskatani Shinichiro (NCTU), Kuroda Rihito, Sugawa Shigetoshi (Tohoku Univ.) ED2019-104 MW2019-138
Abstract (in Japanese) (See Japanese page) 
(in English) (Available after conference date)
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / Normally-off / Floating Gate / HEMT / structural design / Injection Gate / /  
Reference Info. IEICE Tech. Rep., vol. 119, no. 408, ED2019-104, pp. 55-58, Jan. 2020.
Paper # ED2019-104 
Date of Issue 2020-01-24 (ED, MW) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2019-104 MW2019-138

Conference Information
Committee ED MW  
Conference Date 2020-01-31 - 2020-01-31 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound semiconductor, High speed and High frequency devices/Microwave technologies 
Paper Information
Registration To ED 
Conference Code 2020-01-ED-MW 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Operation Principle and Structure of normally-off Floating Gate GaN HEMT with Injection Gate 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) Normally-off  
Keyword(3) Floating Gate  
Keyword(4) HEMT  
Keyword(5) structural design  
Keyword(6) Injection Gate  
Keyword(7)  
Keyword(8)  
1st Author's Name Nagumo Kenshi  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Kimoto Daiki  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Suwa Tomoyuki  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Teramoto Akinobu  
4th Author's Affiliation Hiroshima University (Hiroshima Univ.)
5th Author's Name Shirota Riichiro  
5th Author's Affiliation National Chiao Tung University (NCTU)
6th Author's Name Tskatani Shinichiro  
6th Author's Affiliation National Chiao Tung University (NCTU)
7th Author's Name Kuroda Rihito  
7th Author's Affiliation Tohoku University (Tohoku Univ.)
8th Author's Name Sugawa Shigetoshi  
8th Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker
Date Time 2020-01-31 16:00:00 
Presentation Time 25 
Registration for ED 
Paper # IEICE-ED2019-104,IEICE-MW2019-138 
Volume (vol) IEICE-119 
Number (no) no.408(ED), no.409(MW) 
Page pp.55-58 
#Pages IEICE-4 
Date of Issue IEICE-ED-2020-01-24,IEICE-MW-2020-01-24 


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