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| Presentation | 2020-01-31 16:00 Operation Principle and Structure of normally-off Floating Gate GaN HEMT with Injection Gate Nagumo Kenshi, Kimoto Daiki, Suwa Tomoyuki (Tohoku Univ.), Teramoto Akinobu (Hiroshima Univ.), Shirota Riichiro, Tskatani Shinichiro (NCTU), Kuroda Rihito, Sugawa Shigetoshi (Tohoku Univ.)  ED2019-104 MW2019-138 Link to ES Tech. Rep. Archives: ED2019-104 MW2019-138 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We report a GaN HEMT (High Electron Mobility Transistor) with floating gate, that has an additional injection gate for charge injection as a structure to achieve normally-off. The introduction of the injection gate not only avoids damage to the gate insulation film at the period of charge injection, which was a problem of conventional HEMT devices with floating gate, but also suppresses threshold voltage-variation by the charge injection. We show the usefulness of this structure by circuit modeling of this new structure and structural design by numerical calculation. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN / Normally-off / Floating Gate / HEMT / structural design / Injection Gate / / | |
| Reference Info. | IEICE Tech. Rep., vol. 119, no. 408, ED2019-104, pp. 55-58, Jan. 2020. | |
| Paper # | ED2019-104 | |
| Date of Issue | 2020-01-24 (ED, MW) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2019-104 MW2019-138 Link to ES Tech. Rep. Archives: ED2019-104 MW2019-138 |
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| Conference Information | |
| Committee | ED MW |
| Conference Date | 2020-01-31 - 2020-01-31 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Compound semiconductor, High speed and High frequency devices/Microwave technologies |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2020-01-ED-MW |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Operation Principle and Structure of normally-off Floating Gate GaN HEMT with Injection Gate |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | Normally-off |
| Keyword(3) | Floating Gate |
| Keyword(4) | HEMT |
| Keyword(5) | structural design |
| Keyword(6) | Injection Gate |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Nagumo Kenshi |
| 1st Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 2nd Author's Name | Kimoto Daiki |
| 2nd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 3rd Author's Name | Suwa Tomoyuki |
| 3rd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 4th Author's Name | Teramoto Akinobu |
| 4th Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 5th Author's Name | Shirota Riichiro |
| 5th Author's Affiliation | National Chiao Tung University (NCTU) |
| 6th Author's Name | Tskatani Shinichiro |
| 6th Author's Affiliation | National Chiao Tung University (NCTU) |
| 7th Author's Name | Kuroda Rihito |
| 7th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 8th Author's Name | Sugawa Shigetoshi |
| 8th Author's Affiliation | Tohoku University (Tohoku Univ.) |
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| Speaker | Author-1 |
| Date Time | 2020-01-31 16:00:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2019-104, MW2019-138 |
| Volume (vol) | vol.119 |
| Number (no) | no.408(ED), no.409(MW) |
| Page | pp.55-58 |
| #Pages | 4 |
| Date of Issue | 2020-01-24 (ED, MW) |
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