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Paper Abstract and Keywords
Presentation 2020-01-23 15:15
[Invited Lecture] Surface Treatment using Atomic Hydrogen for Semiconductor Process
Akira Heya (Univ. of Hyogo)
Abstract (in Japanese) (See Japanese page) 
(in English) To realize flexible displays and sheet computers, we have tried to develop the novel surface treatment, named Atomic Hydrogen Annealing (AHA), using atomic hydrogen generated on a heated metal catalyst for next generation semiconductor processing. In this paper, the improvement of the poly-Ge thin-film-transistors, the adhesion property between barrier film and plastic substrate, and the transparent electrode fabrication (reduction of graphene oxide) by using AHA were investigated. In AHA, the hydrogen passivation of defects in the Ge thin film and the reduction of graphene oxide were achieved at a low temperature. AHA is expected to be a surface treatment for next generation semiconductor processing.
Keyword (in Japanese) (See Japanese page) 
(in English) Atomic Hydrogen Annealing (AHA) / Hydrogenation / Reduction / Recombination Energy / Thin-Film Transistors / Plastic substrate / /  
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Conference Information
Committee EID ITE-IDY IEIJ-SSL SID-JC IEE-EDD  
Conference Date 2020-01-23 - 2020-01-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Tottori Univ. 
Topics (in Japanese) (See Japanese page) 
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Paper Information
Registration To ITE-IDY 
Conference Code 2020-01-IDY-EID-SSL-JC-EDD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Surface Treatment using Atomic Hydrogen for Semiconductor Process 
Sub Title (in English)  
Keyword(1) Atomic Hydrogen Annealing (AHA)  
Keyword(2) Hydrogenation  
Keyword(3) Reduction  
Keyword(4) Recombination Energy  
Keyword(5) Thin-Film Transistors  
Keyword(6) Plastic substrate  
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1st Author's Name Akira Heya  
1st Author's Affiliation University of Hyogo (Univ. of Hyogo)
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Speaker Author-1 
Date Time 2020-01-23 15:15:00 
Presentation Time 25 minutes 
Registration for ITE-IDY 
Paper #  
Volume (vol) vol.119 
Number (no) no.385 
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