As one of the nanoparticle-dispersed semiconductor films we have proposed for novel phosphor applications, ZnO-nanoparticle-dispersed Ga2O3 films were grown by mist-chemical vapor deposition. Mist of 5 mmol/L GaCl3 solution mixed with ZnO nanoparticles with a diameter of about 20 nm was transported to the reactor, where the film was deposited on a c-plane sapphire substrate at 500 ℃. The characterization of the grown samples by scanning microscopy, x-ray diffraction and photoluminescence suggests that the transported ZnO nanoparticle changed their properties.