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| Presentation | 2019-12-23 14:30 The crystal growth and optical properties of layered semiconductor InSe Chao Tang, Yohei Sato, Katsuya Watanabe, Junya Osaki, Tadao Tanabe, Yutaka Oyama (Tohoku Univ.)  ED2019-79 Link to ES Tech. Rep. Archives: ED2019-79 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Two-dimensional materials, including InSe and GaSe have attracted more and more attentions nowadays. The high quality InSe crystals have been successfully grown by the temperature difference method under controlled vapor pressure (TDM-CVP), in which the crystals can be prepared at the temperature far lower than their melting point. It is confirmed by characterizations such as Raman spectroscopy and X-ray diffraction that the as-grown crystals have favorable crystallinity, which may attribute to the low-temperature and static growth process. On the other hand, it is known that the GaSe is a typical nonlinear optic crystal used for frequency conversion. We analyzed the nonlinear optical coefficient theoretically by density function theory and confirmed the result in infrared range by second harmonic generation (SHG) experiments. The calculation matches to experiment exactly and also indicate that the InSe, with similar lattice structure with GaSe, also has potential of nonlinear optical application. Indeed, in our previous transmittance measurement on InSe using different frequency generation (DFG) terahertz light source, it was shown that the absorption in terahertz range of InSe was far smaller than that of GaSe. The present study has clarified the potential of InSe to be applied as nonlinear optical crystal for THz generation. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Van der Waals Crystal / InSe / Crystal growth / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 119, no. 353, ED2019-79, pp. 13-15, Dec. 2019. | |
| Paper # | ED2019-79 | |
| Date of Issue | 2019-12-16 (ED) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2019-79 Link to ES Tech. Rep. Archives: ED2019-79 |
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| Conference Information | |
| Committee | ED THz |
| Conference Date | 2019-12-23 - 2019-12-24 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2019-12-ED-THz |
| Language | English (Japanese title is available) |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | The crystal growth and optical properties of layered semiconductor InSe |
| Sub Title (in English) | |
| Keyword(1) | Van der Waals Crystal |
| Keyword(2) | InSe |
| Keyword(3) | Crystal growth |
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| 1st Author's Name | Chao Tang |
| 1st Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 2nd Author's Name | Yohei Sato |
| 2nd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 3rd Author's Name | Katsuya Watanabe |
| 3rd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 4th Author's Name | Junya Osaki |
| 4th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 5th Author's Name | Tadao Tanabe |
| 5th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 6th Author's Name | Yutaka Oyama |
| 6th Author's Affiliation | Tohoku University (Tohoku Univ.) |
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| Speaker | Author-1 |
| Date Time | 2019-12-23 14:30:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2019-79 |
| Volume (vol) | vol.119 |
| Number (no) | no.353 |
| Page | pp.13-15 |
| #Pages | 3 |
| Date of Issue | 2019-12-16 (ED) |
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