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Presentation 2019-12-23 14:30
The crystal growth and optical properties of layered semiconductor InSe
Chao Tang, Yohei Sato, Katsuya Watanabe, Junya Osaki, Tadao Tanabe, Yutaka Oyama (Tohoku Univ.) ED2019-79
Abstract (in Japanese) (See Japanese page) 
(in English) Two-dimensional materials, including InSe and GaSe have attracted more and more attentions nowadays. The high quality InSe crystals have been successfully grown by the temperature difference method under controlled vapor pressure (TDM-CVP), in which the crystals can be prepared at the temperature far lower than their melting point. It is confirmed by characterizations such as Raman spectroscopy and X-ray diffraction that the as-grown crystals have favorable crystallinity, which may attribute to the low-temperature and static growth process. On the other hand, it is known that the GaSe is a typical nonlinear optic crystal used for frequency conversion. We analyzed the nonlinear optical coefficient theoretically by density function theory and confirmed the result in infrared range by second harmonic generation (SHG) experiments. The calculation matches to experiment exactly and also indicate that the InSe, with similar lattice structure with GaSe, also has potential of nonlinear optical application. Indeed, in our previous transmittance measurement on InSe using different frequency generation (DFG) terahertz light source, it was shown that the absorption in terahertz range of InSe was far smaller than that of GaSe. The present study has clarified the potential of InSe to be applied as nonlinear optical crystal for THz generation.
Keyword (in Japanese) (See Japanese page) 
(in English) Van der Waals Crystal / InSe / Crystal growth / / / / /  
Reference Info. IEICE Tech. Rep., vol. 119, no. 353, ED2019-79, pp. 13-15, Dec. 2019.
Paper # ED2019-79 
Date of Issue 2019-12-16 (ED) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee ED THz  
Conference Date 2019-12-23 - 2019-12-24 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
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Paper Information
Registration To ED 
Conference Code 2019-12-ED-THz 
Language English (Japanese title is available) 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) The crystal growth and optical properties of layered semiconductor InSe 
Sub Title (in English)  
Keyword(1) Van der Waals Crystal  
Keyword(2) InSe  
Keyword(3) Crystal growth  
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1st Author's Name Chao Tang  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Yohei Sato  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Katsuya Watanabe  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Junya Osaki  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
5th Author's Name Tadao Tanabe  
5th Author's Affiliation Tohoku University (Tohoku Univ.)
6th Author's Name Yutaka Oyama  
6th Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker
Date Time 2019-12-23 14:30:00 
Presentation Time 25 
Registration for ED 
Paper # IEICE-ED2019-79 
Volume (vol) IEICE-119 
Number (no) no.353 
Page pp.13-15 
#Pages IEICE-3 
Date of Issue IEICE-ED-2019-12-16 


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