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Paper Abstract and Keywords
Presentation 2019-12-23 16:45
GaInSb n-Channel HEMTs Using Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer
Koki Osawa, Takuya Iwaki, Yuki Endoh, Mizuho Hiraoka, Naoyuki Kishimoto, Takuya Hayashi (TUS), Issei Watanabe (NICT/TUS), Yoshimi Yamashita, Shinsuke Hara, Takahiro Gotow, Akifumi Kasamatsu (NICT), Akira Endoh, Hiroki Fujishiro (TUS) ED2019-83
Abstract (in Japanese) (See Japanese page) 
(in English) We succeeded in fabricating GaInSb n-channel HEMTs for the first time in the world and measured their characteristics. We used strained-Al0.40In0.60Sb/Al0.25In0.75Sb stepped buffer and AlInSb barrier layer with high Al content. As a result, the sheet electron density NS increases while keeping relatively high electron mobility µ compared with the Al0.25In0.75Sb/InSb HEMT which we fabricated previously. We obtained a cutoff frequency fT of 214 GHz for the 40-nm-gate HEMT and a maximum oscillation frequency fmax of 179 GHz for the 200-nm-gate HEMT. Furthermore, this novel GaInSb HEMT structure contributes to the reduction of gate leakage current as well as the increase of NS.
Keyword (in Japanese) (See Japanese page) 
(in English) High Electron Mobility Transistor / HEMT / GaInSb / InSb / Quantum well / Cutoff frequency / Maximum oscillation frequency /  
Reference Info. IEICE Tech. Rep., vol. 119, no. 353, ED2019-83, pp. 29-32, Dec. 2019.
Paper # ED2019-83 
Date of Issue 2019-12-16 (ED) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee ED THz  
Conference Date 2019-12-23 - 2019-12-24 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2019-12-ED-THz 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) GaInSb n-Channel HEMTs Using Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer 
Sub Title (in English)  
Keyword(1) High Electron Mobility Transistor  
Keyword(2) HEMT  
Keyword(3) GaInSb  
Keyword(4) InSb  
Keyword(5) Quantum well  
Keyword(6) Cutoff frequency  
Keyword(7) Maximum oscillation frequency  
Keyword(8)  
1st Author's Name Koki Osawa  
1st Author's Affiliation Tokyo University of Science (TUS)
2nd Author's Name Takuya Iwaki  
2nd Author's Affiliation Tokyo University of Science (TUS)
3rd Author's Name Yuki Endoh  
3rd Author's Affiliation Tokyo University of Science (TUS)
4th Author's Name Mizuho Hiraoka  
4th Author's Affiliation Tokyo University of Science (TUS)
5th Author's Name Naoyuki Kishimoto  
5th Author's Affiliation Tokyo University of Science (TUS)
6th Author's Name Takuya Hayashi  
6th Author's Affiliation Tokyo University of Science (TUS)
7th Author's Name Issei Watanabe  
7th Author's Affiliation National Institute of Information and Communications Technology/Tokyo University of Science (NICT/TUS)
8th Author's Name Yoshimi Yamashita  
8th Author's Affiliation National Institute of Information and Communications Technology (NICT)
9th Author's Name Shinsuke Hara  
9th Author's Affiliation National Institute of Information and Communications Technology (NICT)
10th Author's Name Takahiro Gotow  
10th Author's Affiliation National Institute of Information and Communications Technology (NICT)
11th Author's Name Akifumi Kasamatsu  
11th Author's Affiliation National Institute of Information and Communications Technology (NICT)
12th Author's Name Akira Endoh  
12th Author's Affiliation Tokyo University of Science (TUS)
13th Author's Name Hiroki Fujishiro  
13th Author's Affiliation Tokyo University of Science (TUS)
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Speaker
Date Time 2019-12-23 16:45:00 
Presentation Time 25 
Registration for ED 
Paper # IEICE-ED2019-83 
Volume (vol) IEICE-119 
Number (no) no.353 
Page pp.29-32 
#Pages IEICE-4 
Date of Issue IEICE-ED-2019-12-16 


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