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Paper Abstract and Keywords
Presentation 2019-11-22 14:40
Evaluation of III-V nitride by photothermal deflection spectroscopy
Masatomo Sumiya (NIMS) ED2019-58 CPM2019-77 LQE2019-101
Abstract (in Japanese) (See Japanese page) 
(in English) In order to improve the performance of power electronic and photo-passive devices, it is important to evaluate the in-gap states in III-V nitrides and to reduce them. We have developed the apparatus of photothermal deflection spectroscopy (PDS) for evaluating III-V nitride materials. Not only tail states above the valence band, but also the deeper levels in the band gap can be detected by PDS. Advantages of PDS technique are to detect Urbach energy and defect levels for electrically and optically inactive sample with 1) no electrode, 2) coverage of deeper levels, and 3) detection of all charge states. In this study, the PDS data for InGaN alloy films and Mg ion implanted GaN will be presented.
Keyword (in Japanese) (See Japanese page) 
(in English) III-V nitride / Photothermal deflection spectroscopy / defect level / Urbach energy / / / /  
Reference Info. IEICE Tech. Rep., vol. 119, no. 304, LQE2019-101, pp. 107-110, Nov. 2019.
Paper # LQE2019-101 
Date of Issue 2019-11-14 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2019-58 CPM2019-77 LQE2019-101

Conference Information
Committee CPM LQE ED  
Conference Date 2019-11-21 - 2019-11-22 
Place (in Japanese) (See Japanese page) 
Place (in English) Shizuoka Univ. (Hamamatsu) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Semiconductor Devices, Materials, Related Technologies 
Paper Information
Registration To LQE 
Conference Code 2019-11-CPM-LQE-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Evaluation of III-V nitride by photothermal deflection spectroscopy 
Sub Title (in English)  
Keyword(1) III-V nitride  
Keyword(2) Photothermal deflection spectroscopy  
Keyword(3) defect level  
Keyword(4) Urbach energy  
1st Author's Name Masatomo Sumiya  
1st Author's Affiliation National Institute for Materials Science (NIMS)
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Date Time 2019-11-22 14:40:00 
Presentation Time 20 
Registration for LQE 
Paper # IEICE-ED2019-58,IEICE-CPM2019-77,IEICE-LQE2019-101 
Volume (vol) IEICE-119 
Number (no) no.302(ED), no.303(CPM), no.304(LQE) 
Page pp.107-110 
#Pages IEICE-4 
Date of Issue IEICE-ED-2019-11-14,IEICE-CPM-2019-11-14,IEICE-LQE-2019-11-14 

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