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| Presentation | 2019-11-22 14:40 Evaluation of III-V nitride by photothermal deflection spectroscopy Masatomo Sumiya (NIMS)  ED2019-58 CPM2019-77 LQE2019-101 Link to ES Tech. Rep. Archives: ED2019-58 CPM2019-77 LQE2019-101 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In order to improve the performance of power electronic and photo-passive devices, it is important to evaluate the in-gap states in III-V nitrides and to reduce them. We have developed the apparatus of photothermal deflection spectroscopy (PDS) for evaluating III-V nitride materials. Not only tail states above the valence band, but also the deeper levels in the band gap can be detected by PDS. Advantages of PDS technique are to detect Urbach energy and defect levels for electrically and optically inactive sample with 1) no electrode, 2) coverage of deeper levels, and 3) detection of all charge states. In this study, the PDS data for InGaN alloy films and Mg ion implanted GaN will be presented. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | III-V nitride / Photothermal deflection spectroscopy / defect level / Urbach energy / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 119, no. 304, LQE2019-101, pp. 107-110, Nov. 2019. | |
| Paper # | LQE2019-101 | |
| Date of Issue | 2019-11-14 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2019-58 CPM2019-77 LQE2019-101 Link to ES Tech. Rep. Archives: ED2019-58 CPM2019-77 LQE2019-101 |
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| Conference Information | |
| Committee | CPM LQE ED |
| Conference Date | 2019-11-21 - 2019-11-22 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Shizuoka Univ. (Hamamatsu) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2019-11-CPM-LQE-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Evaluation of III-V nitride by photothermal deflection spectroscopy |
| Sub Title (in English) | |
| Keyword(1) | III-V nitride |
| Keyword(2) | Photothermal deflection spectroscopy |
| Keyword(3) | defect level |
| Keyword(4) | Urbach energy |
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| 1st Author's Name | Masatomo Sumiya |
| 1st Author's Affiliation | National Institute for Materials Science (NIMS) |
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| Speaker | Author-1 |
| Date Time | 2019-11-22 14:40:00 |
| Presentation Time | 20 minutes |
| Registration for | LQE |
| Paper # | ED2019-58, CPM2019-77, LQE2019-101 |
| Volume (vol) | vol.119 |
| Number (no) | no.302(ED), no.303(CPM), no.304(LQE) |
| Page | pp.107-110 |
| #Pages | 4 |
| Date of Issue | 2019-11-14 (ED, CPM, LQE) |
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