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Paper Abstract and Keywords
Presentation 2019-11-22 14:20
Estimation of Internal Quantum Efficiency in Various InGaN Single Quantum Wells with Different Qualities by Simultaneous Photoacoustic and Photoluminescence Measurements
Keito Mori, Yuchi Takahashi, Yuya Morimoto, Atsushi A. Yamaguchi (KIT), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (SONY) ED2019-57 CPM2019-76 LQE2019-100
Abstract (in Japanese) (See Japanese page) 
(in English) In order to comprehensively understand the optical properties of nitride semiconductors, we believe accurate measurement of internal quantum efficiency (IQE) would be very important. In our previous studies, we performed simultaneous photoacoustic (PA) and photoluminescence (PL) measurements to estimate IQE values of GaN films and obtained reasonable results. However, the measurement was not very easy for InGaN single quantum well (SQW) samples because the active layers in InGaN SQW samples are very thin, and S/N ratio was too small to obtain reproducible results. In this study, we have successfully reduced the noise level of PA measurements by one order of magnitude. By using this method, we have measured the IQE values for various InGaN SQW samples with different qualities.
Keyword (in Japanese) (See Japanese page) 
(in English) InGaN / quantum well / internal quantum efficiency / photo-acoustic / radiative recombination / / /  
Reference Info. IEICE Tech. Rep., vol. 119, no. 304, LQE2019-100, pp. 101-106, Nov. 2019.
Paper # LQE2019-100 
Date of Issue 2019-11-14 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Download PDF ED2019-57 CPM2019-76 LQE2019-100

Conference Information
Committee CPM LQE ED  
Conference Date 2019-11-21 - 2019-11-22 
Place (in Japanese) (See Japanese page) 
Place (in English) Shizuoka Univ. (Hamamatsu) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Semiconductor Devices, Materials, Related Technologies 
Paper Information
Registration To LQE 
Conference Code 2019-11-CPM-LQE-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Estimation of Internal Quantum Efficiency in Various InGaN Single Quantum Wells with Different Qualities by Simultaneous Photoacoustic and Photoluminescence Measurements 
Sub Title (in English)  
Keyword(1) InGaN  
Keyword(2) quantum well  
Keyword(3) internal quantum efficiency  
Keyword(4) photo-acoustic  
Keyword(5) radiative recombination  
1st Author's Name Keito Mori  
1st Author's Affiliation Kanazawa Institute of Technology (KIT)
2nd Author's Name Yuchi Takahashi  
2nd Author's Affiliation Kanazawa Institute of Technology (KIT)
3rd Author's Name Yuya Morimoto  
3rd Author's Affiliation Kanazawa Institute of Technology (KIT)
4th Author's Name Atsushi A. Yamaguchi  
4th Author's Affiliation Kanazawa Institute of Technology (KIT)
5th Author's Name Susumu Kusanagi  
5th Author's Affiliation SONY Corporation (SONY)
6th Author's Name Yuya Kanitani  
6th Author's Affiliation SONY Corporation (SONY)
7th Author's Name Yoshihiro Kudo  
7th Author's Affiliation SONY Corporation (SONY)
8th Author's Name Shigetaka Tomiya  
8th Author's Affiliation SONY Corporation (SONY)
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Date Time 2019-11-22 14:20:00 
Presentation Time 20 
Registration for LQE 
Paper # IEICE-ED2019-57,IEICE-CPM2019-76,IEICE-LQE2019-100 
Volume (vol) IEICE-119 
Number (no) no.302(ED), no.303(CPM), no.304(LQE) 
Page pp.101-106 
#Pages IEICE-6 
Date of Issue IEICE-ED-2019-11-14,IEICE-CPM-2019-11-14,IEICE-LQE-2019-11-14 

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