Paper Abstract and Keywords |
Presentation |
2019-11-22 12:05
Planar-type electron source based on a graphene/h-BN heterostructure Tomoya Igari (Univ. of Tsukuba/AIST), Masayoshi Nagao (AIST), Kazutaka Mitsuishi (NIMS), Masahiro Sasaki, Yoichi Yamada (Univ. of Tsukuba), Katsuhisa Murakami (AIST/Univ. of Tsukuba) ED2019-75 Link to ES Tech. Rep. Archives: ED2019-75 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In this study, a novel planar-type electron emission device based on atomic layer materials of graphene/$h$-BN heterostructure was developed. The emission current reached a few A/cm$^2$, which was ten times higher than that from a conventional GOS device. The full width at half maximum of the energy distribution of electrons emitted from the graphene/$h$-BN emission device was smaller than 0.6 eV. This is narrower than that from conventional Schottky emitters. In the small current region, energy spread was as small as 0.3 eV, approaching the range of a conventional cold field emitters.These superior properties of the present device, such as high emission current with low energy spread and low operation voltage, open new applications. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
graphene / hexagonal boron nitride / planar-type electron source / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 119, no. 305, ED2019-75, pp. 63-66, Nov. 2019. |
Paper # |
ED2019-75 |
Date of Issue |
2019-11-14 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2019-75 Link to ES Tech. Rep. Archives: ED2019-75 |