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Paper Abstract and Keywords
Presentation 2019-11-22 14:00
Theoretical and Experimental Studies on Estimation Methods of Mobility Edge in InGaN Quantum Wells
Takashi Fujita, Shigeta Sakai, Yuma Ikeda, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (Sony) ED2019-56 CPM2019-75 LQE2019-99
Abstract (in Japanese) (See Japanese page) 
(in English) InGaN is a mixed crystal of InN and GaN. Entire visible light range can be covered by changing their composition. Since the compositional fluctuation in the InGaN quantum well (QW) greatly affects the characteristics of optical devices, it is very important to understand the electronic structures of such fluctuated InGaN-QW systems for the improvement of their device characteristics. Mobility edge, which is the boundary energy between the localized and delocalized states, can be an index to evaluate the potential fluctuation of carriers. Several experiments, however, have been proposed to evaluate the mobility edge, and they give sometime different results each other. In this study, we experimentally and theoretically have studied on the evaluation method of mobility edge, and it was clarified that the estimation of mobility edge by PLE spectrum is the most suitable method.
Keyword (in Japanese) (See Japanese page) 
(in English) InGaN-QWs / Potential fluctuation / Optical characterization / Mobility edge / / / /  
Reference Info. IEICE Tech. Rep., vol. 119, no. 304, LQE2019-99, pp. 97-100, Nov. 2019.
Paper # LQE2019-99 
Date of Issue 2019-11-14 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2019-56 CPM2019-75 LQE2019-99

Conference Information
Committee CPM LQE ED  
Conference Date 2019-11-21 - 2019-11-22 
Place (in Japanese) (See Japanese page) 
Place (in English) Shizuoka Univ. (Hamamatsu) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Semiconductor Devices, Materials, Related Technologies 
Paper Information
Registration To LQE 
Conference Code 2019-11-CPM-LQE-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Theoretical and Experimental Studies on Estimation Methods of Mobility Edge in InGaN Quantum Wells 
Sub Title (in English)  
Keyword(1) InGaN-QWs  
Keyword(2) Potential fluctuation  
Keyword(3) Optical characterization  
Keyword(4) Mobility edge  
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1st Author's Name Takashi Fujita  
1st Author's Affiliation Kanazawa Institute of Technologh (Kanazawa Inst. Tech.)
2nd Author's Name Shigeta Sakai  
2nd Author's Affiliation Kanazawa Institute of Technologh (Kanazawa Inst. Tech.)
3rd Author's Name Yuma Ikeda  
3rd Author's Affiliation Kanazawa Institute of Technologh (Kanazawa Inst. Tech.)
4th Author's Name Atsushi A. Yamaguchi  
4th Author's Affiliation Kanazawa Institute of Technologh (Kanazawa Inst. Tech.)
5th Author's Name Susumu Kusanagi  
5th Author's Affiliation Sony Corporation (Sony)
6th Author's Name Yuya Kanitani  
6th Author's Affiliation Sony Corporation (Sony)
7th Author's Name Yoshihiro Kudo  
7th Author's Affiliation Sony Corporation (Sony)
8th Author's Name Shigetaka Tomiya  
8th Author's Affiliation Sony Corporation (Sony)
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Speaker
Date Time 2019-11-22 14:00:00 
Presentation Time 20 
Registration for LQE 
Paper # IEICE-ED2019-56,IEICE-CPM2019-75,IEICE-LQE2019-99 
Volume (vol) IEICE-119 
Number (no) no.302(ED), no.303(CPM), no.304(LQE) 
Page pp.97-100 
#Pages IEICE-4 
Date of Issue IEICE-ED-2019-11-14,IEICE-CPM-2019-11-14,IEICE-LQE-2019-11-14 


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