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Paper Abstract and Keywords
Presentation 2019-11-21 13:00
Improvement of Short-Channel Effects in Normally-off GaN MOSFETs with Deep Recessed-Gate Structure
Daimotsu Kato, Yosuke Kajiwara, Akira Mukai, Hiroshi Ono, Aya Shindome, Jumpei Tajima, Toshiki Hikosaka, Masahiko Kuraguchi, Shinya Nunoue (Toshiba) ED2019-39 CPM2019-58 LQE2019-82
Abstract (in Japanese) (See Japanese page) 
(in English) We have demonstrated the suppression of SCEs in normally-off GaN MOSFETs with deep recessed-gate structure. TCAD simulation results show the electric field concentration is effectively reduced at the recessed edge of the MOSFETs with the deeper recessed-gate structure. To demonstrate the suppression of SCEs, the MOSFET gate structures with different recess depth ranging from 45 to 165 nm were fabricated and evaluated. The experimental results show that the deeper recessed-gate structure is highly effective for the suppression of the DIBL and improvement of SS and Vth roll-off.
Keyword (in Japanese) (See Japanese page) 
(in English) Recessed-gate structure / Normally-off / GaN MOSFET / Short-channel effects / / / /  
Reference Info. IEICE Tech. Rep., vol. 119, no. 302, ED2019-39, pp. 29-32, Nov. 2019.
Paper # ED2019-39 
Date of Issue 2019-11-14 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2019-39 CPM2019-58 LQE2019-82

Conference Information
Committee CPM LQE ED  
Conference Date 2019-11-21 - 2019-11-22 
Place (in Japanese) (See Japanese page) 
Place (in English) Shizuoka Univ. (Hamamatsu) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Semiconductor Devices, Materials, Related Technologies 
Paper Information
Registration To ED 
Conference Code 2019-11-CPM-LQE-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Improvement of Short-Channel Effects in Normally-off GaN MOSFETs with Deep Recessed-Gate Structure 
Sub Title (in English)  
Keyword(1) Recessed-gate structure  
Keyword(2) Normally-off  
Keyword(3) GaN MOSFET  
Keyword(4) Short-channel effects  
1st Author's Name Daimotsu Kato  
1st Author's Affiliation Toshiba Corporation (Toshiba)
2nd Author's Name Yosuke Kajiwara  
2nd Author's Affiliation Toshiba Corporation (Toshiba)
3rd Author's Name Akira Mukai  
3rd Author's Affiliation Toshiba Corporation (Toshiba)
4th Author's Name Hiroshi Ono  
4th Author's Affiliation Toshiba Corporation (Toshiba)
5th Author's Name Aya Shindome  
5th Author's Affiliation Toshiba Corporation (Toshiba)
6th Author's Name Jumpei Tajima  
6th Author's Affiliation Toshiba Corporation (Toshiba)
7th Author's Name Toshiki Hikosaka  
7th Author's Affiliation Toshiba Corporation (Toshiba)
8th Author's Name Masahiko Kuraguchi  
8th Author's Affiliation Toshiba Corporation (Toshiba)
9th Author's Name Shinya Nunoue  
9th Author's Affiliation Toshiba Corporation (Toshiba)
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Date Time 2019-11-21 13:00:00 
Presentation Time 20 
Registration for ED 
Paper # IEICE-ED2019-39,IEICE-CPM2019-58,IEICE-LQE2019-82 
Volume (vol) IEICE-119 
Number (no) no.302(ED), no.303(CPM), no.304(LQE) 
Page pp.29-32 
#Pages IEICE-4 
Date of Issue IEICE-ED-2019-11-14,IEICE-CPM-2019-11-14,IEICE-LQE-2019-11-14 

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