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| Presentation | 2019-11-08 10:30 [Invited Talk] Fundamental Aspects of Semiconductor Device Modeling Associated with Discrete Impurities II -- Random Dopants under Semiconductor Nano-structures -- Nobuyuki Sano (Univ. Tsukuba)  SDM2019-75 Link to ES Tech. Rep. Archives: SDM2019-75 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Theoretical modeling of discrete impurities under the framework of device simulations plays a crucial role in analyzing the variability of device characteristics and its physics. In particular, the effects of interface and boundary become of more importance in nanoscale device structures such as monolayer channels and/or 3-dimensional devices. The introduction of localized impurities into Drift-Diffusion simulations is, however, not trivial because the simulation scheme is formulated under the long-wavelength (fluid) limit. In the present report, we briefly explain the physics behind discrete impurity under the framework of Drift-Diffusion simulations and clarify that the discrete impurity model, which was proposed by the authors long before, is consistent with the approximations imposed on the Drift-Diffusion scheme. The impurity model is then extended to be applicable to nanoscale device structures by considering the case that impurities are located near the interface between different materials. We also predict from device simulations that charge polarization resulting from the discreteness of impurities may lead to a shift of threshold voltage in FinFET devices. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | random dopant fluctuation / drift-diffusion simulation / Coulomb potential / impurity scattering / screening / fluid limit / mobility model / | |
| Reference Info. | IEICE Tech. Rep., vol. 119, no. 273, SDM2019-75, pp. 33-38, Nov. 2019. | |
| Paper # | SDM2019-75 | |
| Date of Issue | 2019-10-31 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2019-75 Link to ES Tech. Rep. Archives: SDM2019-75 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2019-11-07 - 2019-11-08 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process, Device, Circuit simulation, etc. |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2019-11-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fundamental Aspects of Semiconductor Device Modeling Associated with Discrete Impurities II |
| Sub Title (in English) | Random Dopants under Semiconductor Nano-structures |
| Keyword(1) | random dopant fluctuation |
| Keyword(2) | drift-diffusion simulation |
| Keyword(3) | Coulomb potential |
| Keyword(4) | impurity scattering |
| Keyword(5) | screening |
| Keyword(6) | fluid limit |
| Keyword(7) | mobility model |
| Keyword(8) | |
| 1st Author's Name | Nobuyuki Sano |
| 1st Author's Affiliation | University of Tsukuba (Univ. Tsukuba) |
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| Speaker | Author-1 |
| Date Time | 2019-11-08 10:30:00 |
| Presentation Time | 60 minutes |
| Registration for | SDM |
| Paper # | SDM2019-75 |
| Volume (vol) | vol.119 |
| Number (no) | no.273 |
| Page | pp.33-38 |
| #Pages | 6 |
| Date of Issue | 2019-10-31 (SDM) |
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