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| Presentation | 2019-11-08 13:30 [Invited Talk] Three-dimensional accurate TCAD simulation of trench-gate Si-IGBTs Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima (Tokyo Tech.), Katsumi Satoh (Mitsubishi Electric Corp.), Tomoko Matsudai (Toshiba Electronic Devices & Storage Corp.), Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (The University of Tokyo), Iriya Muneta, Hitoshi Wakabayashi (Tokyo Tech.), Akira Nakajima (AIST), Shin-ichi Nishizawa (Kyushu University, Kasuga), Kazuo Tsutsui (Tokyo Tech.), Toshiro Hiramoto (The University of Tokyo), Hiromichi Ohashi, Hiroshi Iwai (Tokyo Tech.)  SDM2019-77 Link to ES Tech. Rep. Archives: SDM2019-77 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In this work, excellent agreement between 3D TCAD simulations and experimental current-voltage characteristics were obtained in the up to 1000 A/cm$^2$ region for insulated gate bipolar transistors (IGBTs) with scaled trench-gates. The results of 2D and 3D simulations are compared to discuss the difference in current-voltage characteristics and their physical origins. A method to evaluate the saturation current (JCsat) using a 2D simulation is also presented with an appropriate correction. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Silicon Power Device / IGBT / Scaling / TCAD / Simulation / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 119, no. 273, SDM2019-77, pp. 45-48, Nov. 2019. | |
| Paper # | SDM2019-77 | |
| Date of Issue | 2019-10-31 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2019-77 Link to ES Tech. Rep. Archives: SDM2019-77 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2019-11-07 - 2019-11-08 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process, Device, Circuit simulation, etc. |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2019-11-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Three-dimensional accurate TCAD simulation of trench-gate Si-IGBTs |
| Sub Title (in English) | |
| Keyword(1) | Silicon Power Device |
| Keyword(2) | IGBT |
| Keyword(3) | Scaling |
| Keyword(4) | TCAD |
| Keyword(5) | Simulation |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Masahiro Watanabe |
| 1st Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
| 2nd Author's Name | Naoyuki Shigyo |
| 2nd Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
| 3rd Author's Name | Takuya Hoshii |
| 3rd Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
| 4th Author's Name | Kazuyoshi Furukawa |
| 4th Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
| 5th Author's Name | Kuniyuki Kakushima |
| 5th Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
| 6th Author's Name | Katsumi Satoh |
| 6th Author's Affiliation | Mitsubishi Electric Corp. (Mitsubishi Electric Corp.) |
| 7th Author's Name | Tomoko Matsudai |
| 7th Author's Affiliation | Toshiba Electronic Devices & Storage Corp. (Toshiba Electronic Devices & Storage Corp.) |
| 8th Author's Name | Takuya Saraya |
| 8th Author's Affiliation | The University of Tokyo (The University of Tokyo) |
| 9th Author's Name | Toshihiko Takakura |
| 9th Author's Affiliation | The University of Tokyo (The University of Tokyo) |
| 10th Author's Name | Kazuo Itou |
| 10th Author's Affiliation | The University of Tokyo (The University of Tokyo) |
| 11th Author's Name | Munetoshi Fukui |
| 11th Author's Affiliation | The University of Tokyo (The University of Tokyo) |
| 12th Author's Name | Shinichi Suzuki |
| 12th Author's Affiliation | The University of Tokyo (The University of Tokyo) |
| 13th Author's Name | Kiyoshi Takeuchi |
| 13th Author's Affiliation | The University of Tokyo (The University of Tokyo) |
| 14th Author's Name | Iriya Muneta |
| 14th Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
| 15th Author's Name | Hitoshi Wakabayashi |
| 15th Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
| 16th Author's Name | Akira Nakajima |
| 16th Author's Affiliation | Nat. Inst. Advanced Industrial Science and Technology (AIST) |
| 17th Author's Name | Shin-ichi Nishizawa |
| 17th Author's Affiliation | Kyushu University, Kasuga (Kyushu University, Kasuga) |
| 18th Author's Name | Kazuo Tsutsui |
| 18th Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
| Speaker | Author-1 |
| Date Time | 2019-11-08 13:30:00 |
| Presentation Time | 60 minutes |
| Registration for | SDM |
| Paper # | SDM2019-77 |
| Volume (vol) | vol.119 |
| Number (no) | no.273 |
| Page | pp.45-48 |
| #Pages | 4 |
| Date of Issue | 2019-10-31 (SDM) |
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