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| Presentation | 2019-11-08 10:50 [Invited Talk] Mapping of metal/semiconductor and semiconductor/semiconductor interfaces using scanning internal photoemission microscopy Kenji Shiojima (Univ. of Fukui)  CPM2019-51 Link to ES Tech. Rep. Archives: CPM2019-51 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Scanning internal photoemission spectroscopy has been developed to map the electrical characteristics of metal/semiconductor interfaces nondestructively. Our experimental demonstrations of the mapping characterization are reviewed from the aspects of (1) thermal degradation, (2) device degradation by applying high-voltage, (3) process-induced surface damages, (4) grain boundaries of semiconductors and printed metal particles, and (5) expansion to semiconductor/ semiconductor and metal-insulator-semiconductor interfaces. This technique was confirmed to be useful for the development of the wide-bandgap-semiconductor high-power devices. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | wide-bandgap semiconductor / Schottky contacts / scanning internal photoemission microscopy / 2-dimentional characterization / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 119, no. 271, CPM2019-51, pp. 35-38, Nov. 2019. | |
| Paper # | CPM2019-51 | |
| Date of Issue | 2019-10-31 (CPM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | CPM2019-51 Link to ES Tech. Rep. Archives: CPM2019-51 |
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| Conference Information | |
| Committee | CPM |
| Conference Date | 2019-11-07 - 2019-11-08 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Fukui univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | CPM |
| Conference Code | 2019-11-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Mapping of metal/semiconductor and semiconductor/semiconductor interfaces using scanning internal photoemission microscopy |
| Sub Title (in English) | |
| Keyword(1) | wide-bandgap semiconductor |
| Keyword(2) | Schottky contacts |
| Keyword(3) | scanning internal photoemission microscopy |
| Keyword(4) | 2-dimentional characterization |
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| 1st Author's Name | Kenji Shiojima |
| 1st Author's Affiliation | University of Fukui (Univ. of Fukui) |
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| Speaker | Author-1 |
| Date Time | 2019-11-08 10:50:00 |
| Presentation Time | 50 minutes |
| Registration for | CPM |
| Paper # | CPM2019-51 |
| Volume (vol) | vol.119 |
| Number (no) | no.271 |
| Page | pp.35-38 |
| #Pages | 4 |
| Date of Issue | 2019-10-31 (CPM) |
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