講演抄録/キーワード |
講演名 |
2019-10-24 10:50
Low temperature formation of PdErSi/Si(100) for Schottky barrier source and drain MOSFET applications ○Rengie Mark D. Mailig・Yuichiro Aruga・Min Gee Kim・Shun-ichiro Ohmi(Tokyo Tech) SDM2019-61 エレソ技報アーカイブへのリンク:SDM2019-61 |
抄録 |
(和) |
In this report, the effects of the TiN encapsulating layer on the low temperature formation of the PdErSi/Si(100) with dopant segregation (DS) process was investigated. To control the profile of the dopants before the DS process, the thickness of the TiN encapsulating layer was varied from 0 to 30 nm. This is to increase the number of segregated dopants along the interface after the DS process. Low SBH for hole of 0.20 eV with ideality factor of 1.08 for samples 25 nm TiN on 20 nm PdEr was realized. It was also found that the interface qualities of the PdErSi/Si(100) were improved by utilizing the TiN encapsulating layer as shown by the reduction of the density of interface states to 10-11 eV-1cm-2. |
(英) |
In this report, the effects of the TiN encapsulating layer on the low temperature formation of the PdErSi/Si(100) with dopant segregation (DS) process was investigated. To control the profile of the dopants before the DS process, the thickness of the TiN encapsulating layer was varied from 0 to 30 nm. This is to increase the number of segregated dopants along the interface after the DS process. Low SBH for hole of 0.20 eV with ideality factor of 1.08 for samples 25 nm TiN on 20 nm PdEr was realized. It was also found that the interface qualities of the PdErSi/Si(100) were improved by utilizing the TiN encapsulating layer as shown by the reduction of the density of interface states to 10-11 eV-1cm-2. |
キーワード |
(和) |
PdEr-Silicide / Dopant Segregation Process / Schottky Barrier Height / TiN Encapsulating Layer / / / / |
(英) |
PdEr-Silicide / Dopant Segregation Process / Schottky Barrier Height / TiN Encapsulating Layer / / / / |
文献情報 |
信学技報, vol. 119, no. 239, SDM2019-61, pp. 39-43, 2019年10月. |
資料番号 |
SDM2019-61 |
発行日 |
2019-10-16 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
PDFダウンロード |
SDM2019-61 エレソ技報アーカイブへのリンク:SDM2019-61 |