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Paper Abstract and Keywords
Presentation 2019-10-24 13:00
[Invited Talk] Random nanostructure formation and electric readout for nano-artifact metrics
Seiya Kasai, Renpeng Lu, Katsumi Shimizu, Xiang Yin (Hokkaido Univ.), Yosuke Ueba, Mikio Ishikawa, Mitsuru Kitamura (DNP), Morihisa Hoga (AIST), Makoto Naruse (Univ. of Tokyo), Tsutomu Matsumoto (YNU) SDM2019-62 Link to ES Tech. Rep. Archives: SDM2019-62
Abstract (in Japanese) (See Japanese page) 
(in English) We introduce a basic concept of nano-artifact metrics, expected to be a highly secure authentication technique using nano-scale random structures. Recent development of the basic technologies for the nano-artifact metrics including formation of two-dimensional random nanostructure using a resist collapse and a novel electric readout of the formed nanostructures.
Keyword (in Japanese) (See Japanese page) 
(in English) Artifact metrics / Random nanostructure / Resist collapse / Electric readout / Si MOSFET / / /  
Reference Info. IEICE Tech. Rep., vol. 119, no. 239, SDM2019-62, pp. 45-50, Oct. 2019.
Paper # SDM2019-62 
Date of Issue 2019-10-16 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2019-62 Link to ES Tech. Rep. Archives: SDM2019-62

Conference Information
Committee SDM  
Conference Date 2019-10-23 - 2019-10-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Niche, Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process Science and New Process Technology 
Paper Information
Registration To SDM 
Conference Code 2019-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Random nanostructure formation and electric readout for nano-artifact metrics 
Sub Title (in English)  
Keyword(1) Artifact metrics  
Keyword(2) Random nanostructure  
Keyword(3) Resist collapse  
Keyword(4) Electric readout  
Keyword(5) Si MOSFET  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Seiya Kasai  
1st Author's Affiliation Hokkaido University (Hokkaido Univ.)
2nd Author's Name Renpeng Lu  
2nd Author's Affiliation Hokkaido University (Hokkaido Univ.)
3rd Author's Name Katsumi Shimizu  
3rd Author's Affiliation Hokkaido University (Hokkaido Univ.)
4th Author's Name Xiang Yin  
4th Author's Affiliation Hokkaido University (Hokkaido Univ.)
5th Author's Name Yosuke Ueba  
5th Author's Affiliation Dai Nippon Printing (DNP)
6th Author's Name Mikio Ishikawa  
6th Author's Affiliation Dai Nippon Printing (DNP)
7th Author's Name Mitsuru Kitamura  
7th Author's Affiliation Dai Nippon Printing (DNP)
8th Author's Name Morihisa Hoga  
8th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
9th Author's Name Makoto Naruse  
9th Author's Affiliation The University of Tokyo (Univ. of Tokyo)
10th Author's Name Tsutomu Matsumoto  
10th Author's Affiliation Yokohama National University (YNU)
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Speaker Author-1 
Date Time 2019-10-24 13:00:00 
Presentation Time 50 minutes 
Registration for SDM 
Paper # SDM2019-62 
Volume (vol) vol.119 
Number (no) no.239 
Page pp.45-50 
#Pages
Date of Issue 2019-10-16 (SDM) 


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