Paper Abstract and Keywords |
Presentation |
2019-10-24 13:00
[Invited Talk]
Random nanostructure formation and electric readout for nano-artifact metrics Seiya Kasai, Renpeng Lu, Katsumi Shimizu, Xiang Yin (Hokkaido Univ.), Yosuke Ueba, Mikio Ishikawa, Mitsuru Kitamura (DNP), Morihisa Hoga (AIST), Makoto Naruse (Univ. of Tokyo), Tsutomu Matsumoto (YNU) SDM2019-62 Link to ES Tech. Rep. Archives: SDM2019-62 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We introduce a basic concept of nano-artifact metrics, expected to be a highly secure authentication technique using nano-scale random structures. Recent development of the basic technologies for the nano-artifact metrics including formation of two-dimensional random nanostructure using a resist collapse and a novel electric readout of the formed nanostructures. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Artifact metrics / Random nanostructure / Resist collapse / Electric readout / Si MOSFET / / / |
Reference Info. |
IEICE Tech. Rep., vol. 119, no. 239, SDM2019-62, pp. 45-50, Oct. 2019. |
Paper # |
SDM2019-62 |
Date of Issue |
2019-10-16 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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Download PDF |
SDM2019-62 Link to ES Tech. Rep. Archives: SDM2019-62 |
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