| IEICE Technical Committee Submission System Conference Paper's Information |
Online Proceedings [Sign in] Tech. Rep. Archives |
| Go Top Page | Go Previous | [Japanese] / [English] |
| Paper Abstract and Keywords | ||
| Presentation | 2019-10-23 14:20 A study on ferroelectric non-doped HfO2 directly deposited on Si(100) substrate by introducing Hf interlayer Masakazu Kataoka, Masaki Hayashi, Min Gee Kim, Shun-ichiro Ohmi (Tokyo Tech)  SDM2019-54 Link to ES Tech. Rep. Archives: SDM2019-54 |
|
| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In this study, we investigated suppression of SiO2 interfacial layer formation by introducing Hf interlayer to realize the ferroelectric-gate field-effect transistors (FeFET). The HfO2 layer with Hf IL was deposited by RF magnetron sputtering in a reactive sputtering scheme utilizing a Hf target at room temperature. The Ar/O2 flow ratio for reactive sputtering was 2.3/2.5 sccm. PDA was carried out at 600 oC for 30 s in N2 ambient then, Al electrodes were formed. The equivalent oxide thickness (EOT) extracted from C-V characteristics decreased from 8.5 nm to 6.7 nm. However ferroelectric hysteresis was disappeared. Next, the Ar/O2 flow ratio was reduced to 2.3/0.5 sccm and the ferroelectric hysteresis with memory window of 0.27 V was clearly observed even with Hf interlayer. However, stretch was observed in C-V characteristics. To overcome this issue, RF power was decreased from 100 W to 60 W. As a result, memory window was increased from 0.27 V to 0.31 V. In addition, decrease of leakage current and suppression of stretch in C-V characteristics were observed. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Si / Ferroelectric HfO2 / RF magnetron sputtering / Ar/O2 flow ratio / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 119, no. 239, SDM2019-54, pp. 7-10, Oct. 2019. | |
| Paper # | SDM2019-54 | |
| Date of Issue | 2019-10-16 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2019-54 Link to ES Tech. Rep. Archives: SDM2019-54 |
|
| Conference Information | |
| Committee | SDM |
| Conference Date | 2019-10-23 - 2019-10-24 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Niche, Tohoku Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process Science and New Process Technology |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2019-10-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A study on ferroelectric non-doped HfO2 directly deposited on Si(100) substrate by introducing Hf interlayer |
| Sub Title (in English) | |
| Keyword(1) | Si |
| Keyword(2) | Ferroelectric HfO2 |
| Keyword(3) | RF magnetron sputtering |
| Keyword(4) | Ar/O2 flow ratio |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Masakazu Kataoka |
| 1st Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech) |
| 2nd Author's Name | Masaki Hayashi |
| 2nd Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech) |
| 3rd Author's Name | Min Gee Kim |
| 3rd Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech) |
| 4th Author's Name | Shun-ichiro Ohmi |
| 4th Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech) |
| 5th Author's Name | |
| 5th Author's Affiliation | () |
| 6th Author's Name | |
| 6th Author's Affiliation | () |
| 7th Author's Name | |
| 7th Author's Affiliation | () |
| 8th Author's Name | |
| 8th Author's Affiliation | () |
| 9th Author's Name | |
| 9th Author's Affiliation | () |
| 10th Author's Name | |
| 10th Author's Affiliation | () |
| 11th Author's Name | |
| 11th Author's Affiliation | () |
| 12th Author's Name | |
| 12th Author's Affiliation | () |
| 13th Author's Name | |
| 13th Author's Affiliation | () |
| 14th Author's Name | |
| 14th Author's Affiliation | () |
| 15th Author's Name | |
| 15th Author's Affiliation | () |
| 16th Author's Name | |
| 16th Author's Affiliation | () |
| 17th Author's Name | |
| 17th Author's Affiliation | () |
| 18th Author's Name | |
| 18th Author's Affiliation | () |
| Speaker | Author-1 |
| Date Time | 2019-10-23 14:20:00 |
| Presentation Time | 30 minutes |
| Registration for | SDM |
| Paper # | SDM2019-54 |
| Volume (vol) | vol.119 |
| Number (no) | no.239 |
| Page | pp.7-10 |
| #Pages | 4 |
| Date of Issue | 2019-10-16 (SDM) |
[Return to Top Page]