Paper Abstract and Keywords |
Presentation |
2019-10-23 15:40
Investigation of ferroelectric undoped HfO2 formation on Si(100) utilizing post metallization annealing for nonvolatile memory application Min Gee Kim, Masakazu Kataoka, Masaki Hayashi, Rengie Mark D. Mailig, Shun-ichiro Ohmi (Tokyo Tech.) SDM2019-56 Link to ES Tech. Rep. Archives: SDM2019-56 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In this study, post metallization annealing (PMA) for the ferroelectric undoped HfO2 deposited on Si(100) was investigated. Ferroelectric characteristics of 10 nm thick HfO2 were realized with PMA process at 500 oC with Pt top electrodes. The remanent polarization (2Pr) of 2.3 C/cm2 by P-V measurement and clockwise hysteresis were confirmed for Pt/HfO2/Si(100) diodes. FeFETs shows the ferroelectric hysteresis with memory window of 0.9 V by sweep range from -3 to 3 V. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
ferroelectric / undoped HfO2 / post metallization annealing / FeFETs / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 119, no. 239, SDM2019-56, pp. 17-20, Oct. 2019. |
Paper # |
SDM2019-56 |
Date of Issue |
2019-10-16 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2019-56 Link to ES Tech. Rep. Archives: SDM2019-56 |
Conference Information |
Committee |
SDM |
Conference Date |
2019-10-23 - 2019-10-24 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Niche, Tohoku Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Process Science and New Process Technology |
Paper Information |
Registration To |
SDM |
Conference Code |
2019-10-SDM |
Language |
English |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Investigation of ferroelectric undoped HfO2 formation on Si(100) utilizing post metallization annealing for nonvolatile memory application |
Sub Title (in English) |
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Keyword(1) |
ferroelectric |
Keyword(2) |
undoped HfO2 |
Keyword(3) |
post metallization annealing |
Keyword(4) |
FeFETs |
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1st Author's Name |
Min Gee Kim |
1st Author's Affiliation |
Tokyo Institute of Technology (Tokyo Tech.) |
2nd Author's Name |
Masakazu Kataoka |
2nd Author's Affiliation |
Tokyo Institute of Technology (Tokyo Tech.) |
3rd Author's Name |
Masaki Hayashi |
3rd Author's Affiliation |
Tokyo Institute of Technology (Tokyo Tech.) |
4th Author's Name |
Rengie Mark D. Mailig |
4th Author's Affiliation |
Tokyo Institute of Technology (Tokyo Tech.) |
5th Author's Name |
Shun-ichiro Ohmi |
5th Author's Affiliation |
Tokyo Institute of Technology (Tokyo Tech.) |
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Speaker |
Author-1 |
Date Time |
2019-10-23 15:40:00 |
Presentation Time |
30 minutes |
Registration for |
SDM |
Paper # |
SDM2019-56 |
Volume (vol) |
vol.119 |
Number (no) |
no.239 |
Page |
pp.17-20 |
#Pages |
4 |
Date of Issue |
2019-10-16 (SDM) |