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Paper Abstract and Keywords
Presentation 2019-10-23 15:40
Investigation of ferroelectric undoped HfO2 formation on Si(100) utilizing post metallization annealing for nonvolatile memory application
Min Gee Kim, Masakazu Kataoka, Masaki Hayashi, Rengie Mark D. Mailig, Shun-ichiro Ohmi (Tokyo Tech.) SDM2019-56 Link to ES Tech. Rep. Archives: SDM2019-56
Abstract (in Japanese) (See Japanese page) 
(in English) In this study, post metallization annealing (PMA) for the ferroelectric undoped HfO2 deposited on Si(100) was investigated. Ferroelectric characteristics of 10 nm thick HfO2 were realized with PMA process at 500 oC with Pt top electrodes. The remanent polarization (2Pr) of 2.3 C/cm2 by P-V measurement and clockwise hysteresis were confirmed for Pt/HfO2/Si(100) diodes. FeFETs shows the ferroelectric hysteresis with memory window of 0.9 V by sweep range from -3 to 3 V.
Keyword (in Japanese) (See Japanese page) 
(in English) ferroelectric / undoped HfO2 / post metallization annealing / FeFETs / / / /  
Reference Info. IEICE Tech. Rep., vol. 119, no. 239, SDM2019-56, pp. 17-20, Oct. 2019.
Paper # SDM2019-56 
Date of Issue 2019-10-16 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2019-56 Link to ES Tech. Rep. Archives: SDM2019-56

Conference Information
Committee SDM  
Conference Date 2019-10-23 - 2019-10-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Niche, Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process Science and New Process Technology 
Paper Information
Registration To SDM 
Conference Code 2019-10-SDM 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Investigation of ferroelectric undoped HfO2 formation on Si(100) utilizing post metallization annealing for nonvolatile memory application 
Sub Title (in English)  
Keyword(1) ferroelectric  
Keyword(2) undoped HfO2  
Keyword(3) post metallization annealing  
Keyword(4) FeFETs  
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1st Author's Name Min Gee Kim  
1st Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
2nd Author's Name Masakazu Kataoka  
2nd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
3rd Author's Name Masaki Hayashi  
3rd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
4th Author's Name Rengie Mark D. Mailig  
4th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
5th Author's Name Shun-ichiro Ohmi  
5th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
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Speaker Author-1 
Date Time 2019-10-23 15:40:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2019-56 
Volume (vol) vol.119 
Number (no) no.239 
Page pp.17-20 
#Pages
Date of Issue 2019-10-16 (SDM) 


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