講演抄録/キーワード |
講演名 |
2019-10-23 15:40
Investigation of ferroelectric undoped HfO2 formation on Si(100) utilizing post metallization annealing for nonvolatile memory application ○Min Gee Kim・Masakazu Kataoka・Masaki Hayashi・Rengie Mark D. Mailig・Shun-ichiro Ohmi(Tokyo Tech.) SDM2019-56 エレソ技報アーカイブへのリンク:SDM2019-56 |
抄録 |
(和) |
(まだ登録されていません) |
(英) |
In this study, post metallization annealing (PMA) for the ferroelectric undoped HfO2 deposited on Si(100) was investigated. Ferroelectric characteristics of 10 nm thick HfO2 were realized with PMA process at 500 oC with Pt top electrodes. The remanent polarization (2Pr) of 2.3 C/cm2 by P-V measurement and clockwise hysteresis were confirmed for Pt/HfO2/Si(100) diodes. FeFETs shows the ferroelectric hysteresis with memory window of 0.9 V by sweep range from -3 to 3 V. |
キーワード |
(和) |
/ / / / / / / |
(英) |
ferroelectric / undoped HfO2 / post metallization annealing / FeFETs / / / / |
文献情報 |
信学技報, vol. 119, no. 239, SDM2019-56, pp. 17-20, 2019年10月. |
資料番号 |
SDM2019-56 |
発行日 |
2019-10-16 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
PDFダウンロード |
SDM2019-56 エレソ技報アーカイブへのリンク:SDM2019-56 |