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| Presentation | 2019-10-17 15:00 Characteristic analysis of SiN waveguides with different structures and fabrication methods for 1.3 μm multi-wavelength lasers Yuta Yokomura, Takuya Mitarai, Tomohiro Amemiya, Nobuhiko Nishiyama (Tokyotech)  OCS2019-35 OPE2019-73 LQE2019-51 Link to ES Tech. Rep. Archives: OPE2019-73 LQE2019-51 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | A new grid-free WDM system has been proposed in order to overcome the problems of conventional WDM systems that are subject to the necessity of temperature control and the limitation of wavelength spacing. Since the new system requires multi-wavelength lasers with the same wavelength spacing, this time, for the preparation of 1.3 μm band multi-wavelength lasers using SiN waveguides, the refractive index analysis of SiN by changing the film formation conditions and the changes of chromatic dispersion and propagation mode by changing waveguide structure were investigated. In the refractive index analysis, a change of about 0.05 was obtained in the 1.3 μm band by changing the conditions. In the calculation of chromatic dispersion and propagation mode, we confirmed the dispersion shift due to the film forming conditions, and confirmed the value near zero chromatic dispersion at the waveguide cross-sectional area of 0.54 μm2. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Silicon nitride / Waveguide / Chromatic dispersion / Propagation mode / PECVD / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 119, no. 229, OCS2019-35, pp. 45-48, Oct. 2019. | |
| Paper # | OCS2019-35 | |
| Date of Issue | 2019-10-10 (OCS, OPE, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | OCS2019-35 OPE2019-73 LQE2019-51 Link to ES Tech. Rep. Archives: OPE2019-73 LQE2019-51 |
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| Conference Information | |
| Committee | OCS LQE OPE |
| Conference Date | 2019-10-17 - 2019-10-18 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | OCS |
| Conference Code | 2019-10-OCS-LQE-OPE |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characteristic analysis of SiN waveguides with different structures and fabrication methods for 1.3 μm multi-wavelength lasers |
| Sub Title (in English) | |
| Keyword(1) | Silicon nitride |
| Keyword(2) | Waveguide |
| Keyword(3) | Chromatic dispersion |
| Keyword(4) | Propagation mode |
| Keyword(5) | PECVD |
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| 1st Author's Name | Yuta Yokomura |
| 1st Author's Affiliation | Tokyo Institute Technology (Tokyotech) |
| 2nd Author's Name | Takuya Mitarai |
| 2nd Author's Affiliation | Tokyo Institute Technology (Tokyotech) |
| 3rd Author's Name | Tomohiro Amemiya |
| 3rd Author's Affiliation | Tokyo Institute Technology (Tokyotech) |
| 4th Author's Name | Nobuhiko Nishiyama |
| 4th Author's Affiliation | Tokyo Institute Technology (Tokyotech) |
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| Speaker | Author-1 |
| Date Time | 2019-10-17 15:00:00 |
| Presentation Time | 25 minutes |
| Registration for | OCS |
| Paper # | OCS2019-35, OPE2019-73, LQE2019-51 |
| Volume (vol) | vol.119 |
| Number (no) | no.229(OCS), no.230(OPE), no.231(LQE) |
| Page | pp.45-48 |
| #Pages | 4 |
| Date of Issue | 2019-10-10 (OCS, OPE, LQE) |
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