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| Presentation | 2019-08-22 16:00 [Invited Talk] Reconsideration of TDDB Statistics of Thick Dielectric Films Used in SiC/GaN Power/RF Devices and Image Sensors Kenji Okada (TowerJazz Panasonic Semiconductor)  R2019-25 EMD2019-23 CPM2019-24 OPE2019-52 LQE2019-30 Link to ES Tech. Rep. Archives: EMD2019-23 CPM2019-24 OPE2019-52 LQE2019-30 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Recent advances of GaN/SiC power devices, RF/MMIC (monolithic microwave integrated circuit) devices, and also Image Sensors have been increasing the importance of SiO2 and SiN-based THICK dielectric films (> ~20 nm). Because of their thicknesses and relatively low integrities, carrier charging under electrical stress prevents us from appropriately understanding their TDDB characteristics. This paper demonstrates the charging-induced dynamic stress relaxation (CiDSR) effect causes the misunderstanding of TDDB statistics in thick SiO2 and of the TDDB model of SiN films. Then, the constant-delta E model is proposed as an appropriate model for SiN film by suppressing the CiDSR effect. Furthermore, the anomalous thickness dependence of the Weibull slope is reported in both SiO2 and SiN films and the Generalized model is proposed to explain it by combining the conventional percolation model and the constant-delta E model. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | dielectrics / TDDB / Weibull slope / dielectric breakdown / image sensor / GaN / SiC / power device | |
| Reference Info. | IEICE Tech. Rep., vol. 119, no. 169, R2019-25, pp. 29-34, Aug. 2019. | |
| Paper # | R2019-25 | |
| Date of Issue | 2019-08-15 (R, EMD, CPM, OPE, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | R2019-25 EMD2019-23 CPM2019-24 OPE2019-52 LQE2019-30 Link to ES Tech. Rep. Archives: EMD2019-23 CPM2019-24 OPE2019-52 LQE2019-30 |
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| Conference Information | |
| Committee | LQE OPE CPM EMD R |
| Conference Date | 2019-08-22 - 2019-08-23 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | R |
| Conference Code | 2019-08-LQE-OPE-CPM-EMD-R |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Reconsideration of TDDB Statistics of Thick Dielectric Films Used in SiC/GaN Power/RF Devices and Image Sensors |
| Sub Title (in English) | |
| Keyword(1) | dielectrics |
| Keyword(2) | TDDB |
| Keyword(3) | Weibull slope |
| Keyword(4) | dielectric breakdown |
| Keyword(5) | image sensor |
| Keyword(6) | GaN |
| Keyword(7) | SiC |
| Keyword(8) | power device |
| 1st Author's Name | Kenji Okada |
| 1st Author's Affiliation | TowerJazz Panasonic Semiconductor Co., Ltd. (TowerJazz Panasonic Semiconductor) |
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| Speaker | Author-1 |
| Date Time | 2019-08-22 16:00:00 |
| Presentation Time | 45 minutes |
| Registration for | R |
| Paper # | R2019-25, EMD2019-23, CPM2019-24, OPE2019-52, LQE2019-30 |
| Volume (vol) | vol.119 |
| Number (no) | no.169(R), no.170(EMD), no.171(CPM), no.172(OPE), no.173(LQE) |
| Page | pp.29-34 |
| #Pages | 6 |
| Date of Issue | 2019-08-15 (R, EMD, CPM, OPE, LQE) |
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