IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2019-08-22 16:00
[Invited Talk] Reconsideration of TDDB Statistics of Thick Dielectric Films Used in SiC/GaN Power/RF Devices and Image Sensors
Kenji Okada (TowerJazz Panasonic Semiconductor) R2019-25 EMD2019-23 CPM2019-24 OPE2019-52 LQE2019-30
Abstract (in Japanese) (See Japanese page) 
(in English) Recent advances of GaN/SiC power devices, RF/MMIC (monolithic microwave integrated circuit) devices, and also Image Sensors have been increasing the importance of SiO2 and SiN-based THICK dielectric films (> ~20 nm). Because of their thicknesses and relatively low integrities, carrier charging under electrical stress prevents us from appropriately understanding their TDDB characteristics. This paper demonstrates the charging-induced dynamic stress relaxation (CiDSR) effect causes the misunderstanding of TDDB statistics in thick SiO2 and of the TDDB model of SiN films. Then, the constant-delta E model is proposed as an appropriate model for SiN film by suppressing the CiDSR effect. Furthermore, the anomalous thickness dependence of the Weibull slope is reported in both SiO2 and SiN films and the Generalized model is proposed to explain it by combining the conventional percolation model and the constant-delta E model.
Keyword (in Japanese) (See Japanese page) 
(in English) dielectrics / TDDB / Weibull slope / dielectric breakdown / image sensor / GaN / SiC / power device  
Reference Info. IEICE Tech. Rep., vol. 119, no. 169, R2019-25, pp. 29-34, Aug. 2019.
Paper # R2019-25 
Date of Issue 2019-08-15 (R, EMD, CPM, OPE, LQE) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF R2019-25 EMD2019-23 CPM2019-24 OPE2019-52 LQE2019-30

Conference Information
Committee LQE OPE CPM EMD R  
Conference Date 2019-08-22 - 2019-08-23 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To R 
Conference Code 2019-08-LQE-OPE-CPM-EMD-R 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Reconsideration of TDDB Statistics of Thick Dielectric Films Used in SiC/GaN Power/RF Devices and Image Sensors 
Sub Title (in English)  
Keyword(1) dielectrics  
Keyword(2) TDDB  
Keyword(3) Weibull slope  
Keyword(4) dielectric breakdown  
Keyword(5) image sensor  
Keyword(6) GaN  
Keyword(7) SiC  
Keyword(8) power device  
1st Author's Name Kenji Okada  
1st Author's Affiliation TowerJazz Panasonic Semiconductor Co., Ltd. (TowerJazz Panasonic Semiconductor)
2nd Author's Name  
2nd Author's Affiliation ()
3rd Author's Name  
3rd Author's Affiliation ()
4th Author's Name  
4th Author's Affiliation ()
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Date Time 2019-08-22 16:00:00 
Presentation Time 45 
Registration for R 
Paper # IEICE-R2019-25,IEICE-EMD2019-23,IEICE-CPM2019-24,IEICE-OPE2019-52,IEICE-LQE2019-30 
Volume (vol) IEICE-119 
Number (no) no.169(R), no.170(EMD), no.171(CPM), no.172(OPE), no.173(LQE) 
Page pp.29-34 
#Pages IEICE-6 
Date of Issue IEICE-R-2019-08-15,IEICE-EMD-2019-08-15,IEICE-CPM-2019-08-15,IEICE-OPE-2019-08-15,IEICE-LQE-2019-08-15 

[Return to Top Page]

[Return to IEICE Web Page]

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan