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| Presentation | 2019-08-22 16:45 [Invited Talk] 3D Flash Memory Cell Reliability Yuichiro Mitani, Harumi Seki, Takanori Asano, Yasushi Nakasaki (Toshiba Memory)  R2019-26 EMD2019-24 CPM2019-25 OPE2019-53 LQE2019-31 Link to ES Tech. Rep. Archives: EMD2019-24 CPM2019-25 OPE2019-53 LQE2019-31 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | As conventional planar NAND flash memories are limited from physical and electrical scaling point of view, the three-dimensional flash memories, in which memory cells are stacked vertically, has rapidly achieved maturity to keep a trend of increasing bit density and reducing bit cost. To realize more capacity, total number of layers are increasing (>64 layers) and multi-level cell (MLC) operations are indispensable (>3bit/cell). Extending this capacity trend requires highly-reliable memory cell. This paper focus on the typical charge-trap type memory cells, and the reliability issues will be discussed | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Flash memory / Reliability / Insulators / Defect / Trap / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 119, no. 169, R2019-26, pp. 35-38, Aug. 2019. | |
| Paper # | R2019-26 | |
| Date of Issue | 2019-08-15 (R, EMD, CPM, OPE, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | R2019-26 EMD2019-24 CPM2019-25 OPE2019-53 LQE2019-31 Link to ES Tech. Rep. Archives: EMD2019-24 CPM2019-25 OPE2019-53 LQE2019-31 |
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| Conference Information | |
| Committee | LQE OPE CPM EMD R |
| Conference Date | 2019-08-22 - 2019-08-23 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | R |
| Conference Code | 2019-08-LQE-OPE-CPM-EMD-R |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 3D Flash Memory Cell Reliability |
| Sub Title (in English) | |
| Keyword(1) | Flash memory |
| Keyword(2) | Reliability |
| Keyword(3) | Insulators |
| Keyword(4) | Defect |
| Keyword(5) | Trap |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Yuichiro Mitani |
| 1st Author's Affiliation | Toshiba Memory Corporation (Toshiba Memory) |
| 2nd Author's Name | Harumi Seki |
| 2nd Author's Affiliation | Toshiba Memory Corporation (Toshiba Memory) |
| 3rd Author's Name | Takanori Asano |
| 3rd Author's Affiliation | Toshiba Memory Corporation (Toshiba Memory) |
| 4th Author's Name | Yasushi Nakasaki |
| 4th Author's Affiliation | Toshiba Memory Corporation (Toshiba Memory) |
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| Speaker | Author-1 |
| Date Time | 2019-08-22 16:45:00 |
| Presentation Time | 45 minutes |
| Registration for | R |
| Paper # | R2019-26, EMD2019-24, CPM2019-25, OPE2019-53, LQE2019-31 |
| Volume (vol) | vol.119 |
| Number (no) | no.169(R), no.170(EMD), no.171(CPM), no.172(OPE), no.173(LQE) |
| Page | pp.35-38 |
| #Pages | 4 |
| Date of Issue | 2019-08-15 (R, EMD, CPM, OPE, LQE) |
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