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Presentation 2019-08-09 13:05
Preparation and evaluation of Nb3Ge superconducting thin films
Akira Kawakami, Hirotaka Terai (NICT), Yoshinori Uzawa (NAOJ) SCE2019-13 Link to ES Tech. Rep. Archives: SCE2019-13
Abstract (in Japanese) (See Japanese page) 
(in English) The Nb3Ge thin film with the A15 crystal structure exhibits a superconducting transition temperature of up to 23 K, and the gap frequency is considered to reach 2 THz. In addition, it has many merits in THz band SIS mixer development, such as low resistivity over transition temperature, no crystal anisotropy, and easy reactive etching. In this study, we tried to deposit Nb3Ge thin film using co-sputtering method with high degree of freedom of film composition control. First, the molar deposition rates of Nb and Ge materials by DC sputtering were derived, and the discharge power (Nb: 300 W, Ge: 32 to 48 W) to achieve Nb: Ge = 3: 1 was calculated. The A-plane sapphire substrate was used as the substrate, and the substrate heating temperature was set to 920 ℃. The lattice constant of the obtained Nb3Ge thin film was about 0.513 nm, and the peaks of Nb5Ge3 were observed together with the peaks of Nb3Ge. The film thickness was 180 nm and the superconducting transition temperatures was about 21.0 K. The film resistivity at 25 K was 45 $mu$$Omega$cm, which is lower than that of NbTiN used in conventional SIS mixers.
Keyword (in Japanese) (See Japanese page) 
(in English) A15 / Nb3Ge / Nb5Ge3 / co-sputtering / / / /  
Reference Info. IEICE Tech. Rep., vol. 119, no. 164, SCE2019-13, pp. 27-30, Aug. 2019.
Paper # SCE2019-13 
Date of Issue 2019-08-02 (SCE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SCE2019-13 Link to ES Tech. Rep. Archives: SCE2019-13

Conference Information
Committee SCE  
Conference Date 2019-08-09 - 2019-08-09 
Place (in Japanese) (See Japanese page) 
Place (in English) National Institute of Advanced Industrial Science and Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Device, think film, etc. 
Paper Information
Registration To SCE 
Conference Code 2019-08-SCE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Preparation and evaluation of Nb3Ge superconducting thin films 
Sub Title (in English)  
Keyword(1) A15  
Keyword(2) Nb3Ge  
Keyword(3) Nb5Ge3  
Keyword(4) co-sputtering  
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1st Author's Name Akira Kawakami  
1st Author's Affiliation National Institute of Information and Communications Technology (NICT)
2nd Author's Name Hirotaka Terai  
2nd Author's Affiliation National Institute of Information and Communications Technology (NICT)
3rd Author's Name Yoshinori Uzawa  
3rd Author's Affiliation National Astronomical Observatory of Japan (NAOJ)
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Speaker Author-1 
Date Time 2019-08-09 13:05:00 
Presentation Time 25 minutes 
Registration for SCE 
Paper # SCE2019-13 
Volume (vol) vol.119 
Number (no) no.164 
Page pp.27-30 
#Pages
Date of Issue 2019-08-02 (SCE) 


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