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| Presentation | 2019-06-21 11:40 Formation of Ultrathin Segregated-Ge Crystal on Al/Ge(111) Surface by Thermal Annealing Masato Kobayashi, Akio Ohta, Masashi Kurosawa, Masaaki Araidai, Noriyuki Taoka, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.)  SDM2019-27 Link to ES Tech. Rep. Archives: SDM2019-27 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We have studied the chemical and crystallographic structures of vacuum evaporated Al/Ge(111) before and after the thermal annealing to form the germenium (Ge) two dimensional (2D) crystals on the surface by the control of Ge segregation from Al. Hetero-epitaxial Al was found to be grown on Ge(111) by control the Al thickness and deposition rate during the vacuum evaporation. Surface flattening and Ge segregation on Al/Ge(111) structure by vacuume annealing were systematically investigated, and ultrathin segragated-Ge crystals with the thickness below 1 nm can be formed on the hetero-epitaxial Al surface. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Germanium (Ge) / Crystal Growth / Thin Film / Chemical Structure / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 119, no. 96, SDM2019-27, pp. 11-15, June 2019. | |
| Paper # | SDM2019-27 | |
| Date of Issue | 2019-06-14 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2019-27 Link to ES Tech. Rep. Archives: SDM2019-27 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2019-06-21 - 2019-06-21 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Univ. VBL3F |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Material Science and Process Technology for MOS Devices and Memories |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2019-06-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Formation of Ultrathin Segregated-Ge Crystal on Al/Ge(111) Surface by Thermal Annealing |
| Sub Title (in English) | |
| Keyword(1) | Germanium (Ge) |
| Keyword(2) | Crystal Growth |
| Keyword(3) | Thin Film |
| Keyword(4) | Chemical Structure |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Masato Kobayashi |
| 1st Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 2nd Author's Name | Akio Ohta |
| 2nd Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 3rd Author's Name | Masashi Kurosawa |
| 3rd Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 4th Author's Name | Masaaki Araidai |
| 4th Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 5th Author's Name | Noriyuki Taoka |
| 5th Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 6th Author's Name | Mitsuhisa Ikeda |
| 6th Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 7th Author's Name | Katsunori Makihara |
| 7th Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 8th Author's Name | Seiichi Miyazaki |
| 8th Author's Affiliation | Nagoya University (Nagoya Univ.) |
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| Speaker | Author-1 |
| Date Time | 2019-06-21 11:40:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2019-27 |
| Volume (vol) | vol.119 |
| Number (no) | no.96 |
| Page | pp.11-15 |
| #Pages | 5 |
| Date of Issue | 2019-06-14 (SDM) |
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