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Paper Abstract and Keywords
Presentation 2019-06-21 14:30
[Invited Lecture] Observation of three dimensional atomic arrangements of active and inactive impurities heavy doped in silicon by using photoelectron holography method
Kazuo Tsutsui (Tokyo Tech), Tomohiro Matsushita (JASRI), Kotaro Natori, Tatsuhiro Ogawa (Tokyo Tech), Takayuki Muro (JASRI), Yoshitada Morikawa (Osaka Univ.), Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi (Tokyo Tech), Kouichi Hayashi (Nagoya Inst. Tech.), Fumihiko Matsui (Inst. Molecular Science), Toyohiko Kinoshita (JASRI)   エレソ技報アーカイブはこちら
Abstract (in Japanese) (See Japanese page) 
(in English) Photoelectron holography method combined with first-principles simulations determined the local three-dimensional atomic structures of arsenic (As) atoms doped in a silicon (Si) crystal. Presence of the three types of As atomic structures were revealed; electrically active As occupying substitutional sites, electrically inactive As embedded in the AsnV(n=2~4) type clusters, and electrically inactive As in locally disordered structures.
Keyword (in Japanese) (See Japanese page) 
(in English) photoelectron holography / impurity / dopant / cluster / arsenic (As) / silicon (Si) / /  
Reference Info. IEICE Tech. Rep., vol. 119, no. 96, SDM2019-30, pp. 23-27, June 2019.
Paper # SDM2019-30 
Date of Issue 2019-06-14 (SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380

Conference Information
Committee SDM  
Conference Date 2019-06-21 - 2019-06-21 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Univ. VBL3F 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices and Memories 
Paper Information
Registration To SDM 
Conference Code 2019-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Observation of three dimensional atomic arrangements of active and inactive impurities heavy doped in silicon by using photoelectron holography method 
Sub Title (in English)  
Keyword(1) photoelectron holography  
Keyword(2) impurity  
Keyword(3) dopant  
Keyword(4) cluster  
Keyword(5) arsenic (As)  
Keyword(6) silicon (Si)  
Keyword(7)  
Keyword(8)  
1st Author's Name Kazuo Tsutsui  
1st Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
2nd Author's Name Tomohiro Matsushita  
2nd Author's Affiliation Japan Synchrotron Radiation Research Institute (JASRI)
3rd Author's Name Kotaro Natori  
3rd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
4th Author's Name Tatsuhiro Ogawa  
4th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
5th Author's Name Takayuki Muro  
5th Author's Affiliation Japan Synchrotron Radiation Research Institute (JASRI)
6th Author's Name Yoshitada Morikawa  
6th Author's Affiliation Osaka University (Osaka Univ.)
7th Author's Name Takuya Hoshii  
7th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
8th Author's Name Kuniyuki Kakushima  
8th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
9th Author's Name Hitoshi Wakabayashi  
9th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
10th Author's Name Kouichi Hayashi  
10th Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. Tech.)
11th Author's Name Fumihiko Matsui  
11th Author's Affiliation Institute for Molecular Science (Inst. Molecular Science)
12th Author's Name Toyohiko Kinoshita  
12th Author's Affiliation Japan Synchrotron Radiation Research Institute (JASRI)
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Speaker
Date Time 2019-06-21 14:30:00 
Presentation Time 30 
Registration for SDM 
Paper # IEICE-SDM2019-30 
Volume (vol) IEICE-119 
Number (no) no.96 
Page pp.23-27 
#Pages IEICE-5 
Date of Issue IEICE-SDM-2019-06-14 


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