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Paper Abstract and Keywords
Presentation 2019-06-21 15:45
New Operation Mode of VO2-Channel Mott Transistors for Ultra-Sharp ON/OFF Switching
Takeaki Yajima (Univ. of Tokyo), Yusuke Samata, Tomonori Nishimura, Akira Toriumi (JST)
Abstract (in Japanese) (See Japanese page) 
(in English) The characteristics of the VO2-channel Mott transistor is systematically studied. The transfer characteristics shows a complete phase transition of the VO2 channel from the insulating state to the metallic state as a func-tion of the gate voltage. Interestingly, the transfer char-acteristics has a universal point at a critical gate voltage, where the channel current is almost independent of the applied drain voltage. When the gate voltage is swept across this universal point, the channel current discon-tinuously jumps showing an exceptionally low sub-threshold swing < 0.5 mV/dec, although accompa-nied by a hysteresis. The observed discontinuity in the channel current can be well understood by the negative resistance instability of the phase-coexisting VO2 channel, which can be utilized for designing a ultra-low-voltage switch in the Mott transistor.
Keyword (in Japanese) (See Japanese page) 
(in English) Metal-insulator transition / Mott transistor / VO2 / / / / /  
Reference Info. IEICE Tech. Rep., vol. 119, no. 96, SDM2019-32, pp. 35-38, June 2019.
Paper # SDM2019-32 
Date of Issue 2019-06-14 (SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380

Conference Information
Committee SDM  
Conference Date 2019-06-21 - 2019-06-21 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Univ. VBL3F 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices and Memories 
Paper Information
Registration To SDM 
Conference Code 2019-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) New Operation Mode of VO2-Channel Mott Transistors for Ultra-Sharp ON/OFF Switching 
Sub Title (in English)  
Keyword(1) Metal-insulator transition  
Keyword(2) Mott transistor  
Keyword(3) VO2  
1st Author's Name Takeaki Yajima  
1st Author's Affiliation The University of Tokyo (Univ. of Tokyo)
2nd Author's Name Yusuke Samata  
2nd Author's Affiliation JST PRESTO (JST)
3rd Author's Name Tomonori Nishimura  
3rd Author's Affiliation JST PRESTO (JST)
4th Author's Name Akira Toriumi  
4th Author's Affiliation JST PRESTO (JST)
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Date Time 2019-06-21 15:45:00 
Presentation Time 20 
Registration for SDM 
Paper # IEICE-SDM2019-32 
Volume (vol) IEICE-119 
Number (no) no.96 
Page pp.35-38 
#Pages IEICE-4 
Date of Issue IEICE-SDM-2019-06-14 

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