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| Presentation | 2019-05-16 16:15 Evaluation of switching characteristics of Ta2O5-δ based analog resistive memory using Cu and Ta top electrode Yuanlin Li, Atsushi Tsurumaki-Fukuchi, Masashi Arita (Hokkaido Univ.), Takashi Morie (Kyushu Inst. Tech.), Yasuo Takahashi (Hokkaido Univ.)  ED2019-16 CPM2019-7 SDM2019-14 Link to ES Tech. Rep. Archives: ED2019-16 CPM2019-7 SDM2019-14 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We present the differences of two mechanisms’ initial states and multilevel switching behavior using Ta2O5-δ ReRAM. For showing some of the important features of realizing artificial neural network in a hardware-aspect, resistive random access memory has been drawing researchers’ attention since the research booming of artificial intelligence. Here we are trying to reveal the underlaying switching mechanism to take ReRAM to an applicable stage. We focused on the two reported hypotheses of mechanisms, VCM and ECM, using Ta and Cu top electrodes (TEs), respectively. For the measurement results on initial states and during-switching, we clarified that samples with Ta-TE show strong dependency of switching capability on the initial resistance. For samples with Cu-TE applied, we found an mutual point of fabrication conditions that were showing perfectly coincided forming processes, despite of unpredicted lower initial resistances caused by diffusion of Cu atoms. This suggests that the insulator fabricated with 0% oxygen ambient has weak dependency on top electrode. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | resistive memory / artificial synapse / multilevel switching / tantalum oxide / top electrode / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 119, no. 34, ED2019-16, pp. 29-34, May 2019. | |
| Paper # | ED2019-16 | |
| Date of Issue | 2019-05-09 (ED, CPM, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2019-16 CPM2019-7 SDM2019-14 Link to ES Tech. Rep. Archives: ED2019-16 CPM2019-7 SDM2019-14 |
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| Conference Information | |
| Committee | SDM ED CPM |
| Conference Date | 2019-05-16 - 2019-05-17 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Shizuoka Univ. (Hamamatsu) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Materials, Fabrication, and Characterization of Functional Devices, and Related Technology |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2019-05-SDM-ED-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Evaluation of switching characteristics of Ta2O5-δ based analog resistive memory using Cu and Ta top electrode |
| Sub Title (in English) | |
| Keyword(1) | resistive memory |
| Keyword(2) | artificial synapse |
| Keyword(3) | multilevel switching |
| Keyword(4) | tantalum oxide |
| Keyword(5) | top electrode |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Yuanlin Li |
| 1st Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 2nd Author's Name | Atsushi Tsurumaki-Fukuchi |
| 2nd Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 3rd Author's Name | Masashi Arita |
| 3rd Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 4th Author's Name | Takashi Morie |
| 4th Author's Affiliation | Kyushu Institute of Technology (Kyushu Inst. Tech.) |
| 5th Author's Name | Yasuo Takahashi |
| 5th Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
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| Speaker | Author-1 |
| Date Time | 2019-05-16 16:15:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2019-16, CPM2019-7, SDM2019-14 |
| Volume (vol) | vol.119 |
| Number (no) | no.34(ED), no.35(CPM), no.36(SDM) |
| Page | pp.29-34 |
| #Pages | 6 |
| Date of Issue | 2019-05-09 (ED, CPM, SDM) |
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