Paper Abstract and Keywords |
Presentation |
2019-03-17 13:00
MOSFET-based ultra high resistance configuration for ultra low current sensing Xinghuai Zhang, Shigetoshi Nakatake (Univ. of Kitakyushu) CPSY2018-103 DC2018-85 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In this work, we propose a method to configure an ultrahigh resistance of 1GΩ or more on a chip, which is used for I-V conversion circuit, in order to detect ultra-weak currents of several pA ~nA. In our method, a desired resistance value is realized by connecting MOSFETs in the cutoff region in series-parallel. The influence of I-V conversion characteristic, temperature characteristic, area due to the difference in the number of stages of series-parallel connection is confirmed by simulation. Hence, an appropriate configuration method is derived. We also compare with the existing Poly resistance and discuss the practicality of proposed MOSFET resistance. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
On-chip resistance / Ultrahigh resistance / I-V converter / Ultra weak current sensing / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 118, no. 514, CPSY2018-103, pp. 103-108, March 2019. |
Paper # |
CPSY2018-103 |
Date of Issue |
2019-03-10 (CPSY, DC) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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CPSY2018-103 DC2018-85 |
Conference Information |
Committee |
CPSY DC IPSJ-SLDM IPSJ-EMB IPSJ-ARC |
Conference Date |
2019-03-17 - 2019-03-18 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Nishinoomote City Hall (Tanega-shima) |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
ETNET2019 |
Paper Information |
Registration To |
CPSY |
Conference Code |
2019-03-CPSY-DC-SLDM-EMB-ARC |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
MOSFET-based ultra high resistance configuration for ultra low current sensing |
Sub Title (in English) |
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On-chip resistance |
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Ultrahigh resistance |
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I-V converter |
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Ultra weak current sensing |
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1st Author's Name |
Xinghuai Zhang |
1st Author's Affiliation |
The University of Kitakyushu (Univ. of Kitakyushu) |
2nd Author's Name |
Shigetoshi Nakatake |
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The University of Kitakyushu (Univ. of Kitakyushu) |
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Speaker |
Author-1 |
Date Time |
2019-03-17 13:00:00 |
Presentation Time |
20 minutes |
Registration for |
CPSY |
Paper # |
CPSY2018-103, DC2018-85 |
Volume (vol) |
vol.118 |
Number (no) |
no.514(CPSY), no.515(DC) |
Page |
pp.103-108 |
#Pages |
6 |
Date of Issue |
2019-03-10 (CPSY, DC) |
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